The SL05N06Z is an N-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (60V) and a certain current carrying capacity (5.0A), making it very suitable for use in medium-voltage and medium-power circuit designs. In addition, its low on-state resistance (58mΩ at 10V, 3A) and low ……

The IRFR5305 is a P-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (-60V) and a large current carrying capacity (-30A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (26mΩ @ -10V, -15A) and low thre……

The SL25N10 is an N-channel MOSFET with outstanding performance parameters. It features a high drain-source voltage (100V) and a large current-carrying capacity (25A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (35mΩ @ 10V, 15A) and low thres……

The SL50N06D is an N-channel MOSFET utilizing advanced Trench technology in its production. It features a high drain-source voltage (60V) and continuous drain current (50A), offering advantages such as high frequency, high current, and strong anti-impact capability. Additionally, its low on-resistance (14mΩ at 10V, 25A……

The SL2309A is a P-channel MOSFET with excellent characteristics such as -60V drain-source voltage, -2.0A continuous drain current, low on-state resistance (158mΩ@-10V,-2A), and low threshold voltage (-1.9V@-250uA). This power device is suitable for the power and control system design of electric Vertical Take-Off and ……

The BAS70W-05 is an N-channel MOSFET with a 70V drain-source voltage and a maximum forward average rectified current of 100mA. It features high current-carrying capacity, low forward voltage drop, and fast switching speed. These characteristics make the BAS70W-05 an ideal current control and voltage regulation componen……

The SL4421 is a P-channel MOSFET with a -60V drain-source voltage and a -8.5A continuous drain current, known for its low on-state resistance (23mΩ at -10V, -8A) and a relatively low threshold voltage (-1.6V at 250uA). These characteristics enable the SL4421 to control, protect, and manage battery charging and discharg……

The SL12N10 is an N-channel MOSFET with a drain-source voltage of 100V and a continuous drain current of 12A. It has gained attention for its low on-state resistance (130mΩ @ 10V, 220mA) and relatively low threshold voltage (2V @ 250uA). In the design of today's portable charging devices such as power banks and wireles……

The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250uA). These features make it an ideal choice for automotive electronic systems. With the contin……

The 2N7002KW is an N-channel MOSFET suitable for various low-power, high-efficiency circuit designs. It features a high drain-source voltage (60V) and continuous drain current (340mA), capable of withstanding certain voltage and current loads. Additionally, its low on-state resistance (1.1Ω @ 4.5V, 200mA) and low thres……

In the electronic circuit, MOS tube and IGBT tube often appear, they can be used as switch components, and MOS tubes and IGBT tubes are also similar in appearance and characteristic parameters. So why do some circuits use MOS tubes, and some circuits use IGBT tube? Let's take a look at what is the difference between th……

The full name of IGBT is insulated gate bipolar transistor, which is a compound structure device. It combines the advantages of MOS transistor and BJT bipolar transistor. It is widely used in the fields of voltage-current conversion and power output, especially in the high-voltage and high-current fields. IGBT is one o……