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Bipolar Transistor (BJT)

FMMT489

Vceo:30V

Ic:1A

Pd:500mW

VCE(sat)@Ic,Ib:300mV@1A,100mA

hFE@Ic,Vce:100@1A,2V

fT:150MHz

Working temperature:-55℃~+150℃@(Tj)

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Product Details

FMMT489 SOT-23_00.jpg

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