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2SB1424-R PNP Bipolar Transistor SOT-89

2SB1424-R is a PNP high‑current silicon transistor in SOT‑89 surface‑mount package. It features low saturation voltage and excellent DC current gain, designed for high‑current switching, driver circuits, and power amplification. The R‑grade provides hFE from 180 to 390 for stable and consistent performance.

Our Advantages


  • High continuous collector current up to 3A for strong load driving
  • Low saturation voltage for high efficiency and low power loss
  • Excellent and stable DC current gain for reliable control
  • SOT‑89 package with good thermal dissipation
  • Wide operating temperature range for industrial applications
  • Stable electrical parameters and high batch consistency
  • Tape‑and‑reel packaging suitable for automated SMT assembly

Description


2SB1424-R is a PNP high‑current silicon transistor in SOT‑89 surface‑mount package. It features low saturation voltage and excellent DC current gain, designed for high‑current switching, driver circuits, and power amplification. The R‑grade provides hFE from 180 to 390 for stable and consistent performance.

FEATURES


  • PNP high‑current transistor
  • SOT‑89 surface mount package
  • Low saturation voltage VCE(sat)
  • Excellent DC current gain characteristics
  • hFE grade R: 180–390
  • VCBO = −20V, VCEO = −20V, VEBO = −6V
  • Continuous collector current: IC = −3A
  • Power dissipation: PD = 500mW
  • Transition frequency: fT = 240MHz (typ.)
  • Junction/storage temperature: −55℃ to +150℃

Applications


  • High‑current driver circuits
  • Motor control and drive systems
  • DC‑DC converters and power management
  • Audio power amplifier stages
  • LED lighting driver modules
  • Industrial control equipment
  • Medium‑power switching circuits
  • Battery‑powered power devices
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Description
2SB1424-R SOT-89​.pdf
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