The SL11N65CD is an N-channel power MOSFET with a drain-source voltage of 650V, continuous drain current of 11A, and a power rating of 87W. Additionally, it has an on-state resistance of 318mΩ @ 10V, 4.0A, threshold voltage of 4.5V @ 0.8mA, and comes in a TO-252 package. These parameters make the SL11N65CD highly suitable for high-efficiency switched-mode power supplies or electronic applications requiring medium-high voltage, high current, and moderate power.

Slkor, as a national high-tech enterprise, has obtained ISO9001 quality management system certification, as well as EU RoHS and REACH certifications, showcasing its high standards in product quality and environmental protection. The company's products are widely used in the 5G field and have broad applications in areas such as smartphones, laptops, robots, smart homes, IoT, LED lighting, 3C electronics, smart wearable devices, and IoT connectivity.

The high-voltage MOSFET SL5N100F is a star product in Slkor Micro Semiconductor's product line. The SL5N100F adopts an N-channel structure, with a drain-source voltage (Vdss) of up to 1000V, a continuous drain current (Id) of 5A, and a power dissipation (Pd) of up to 60W. Its on-state resistance (RDS(on)@Vgs,Id) is only 4.2Ω, and the threshold voltage (Vgs(th)@Id) is 3.5V@100μA, with a TO-220F package. These parameters demonstrate that the SL5N100F exhibits excellent performance in high-voltage, medium current, and medium-power applications.

One highlight in Slkor Micro Semiconductor's product line is the high-voltage MOSFET product SL5N100P. The SL5N100P adopts an N-channel structure, with a drain-source voltage (Vdss) of up to 1000V, continuous drain current (Id) of 5A, and power dissipation (Pd) of 48W. The on-state resistance (RDS(on)@Vgs,Id) is only 4.2Ω, and the threshold voltage (Vgs(th)@Id) is 3.5V@100μA, packaged in TO-3PH. These parameters demonstrate the outstanding performance of SL5N100P in high-voltage, medium-current, and medium-power applications.

Slkor Semiconductor's SL18N20 is a silicon N-channel enhancement mode VDMOSFET, developed using self-aligned planar technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. This excellent transistor product has a wide range of applications in various power switch circuits, providing crucial support for system miniaturization and higher efficiency.

Slkor Semiconductor, as a renowned high-tech enterprise, exhibits immense development potential and market prospects. In the present-day applications of portable devices and battery power systems, high-performance and low-power semiconductor devices are increasingly valued. The SL90P03G product from Slkor Semiconductor precisely meets this demand and demonstrates extensive application prospects in areas such as portable devices, battery power systems, and power management for laptops.

With the continuous advancement of technology, contactless technology has become an increasingly popular and important technological means in the field of smart homes. This technology, through various methods such as wireless signals, electromagnetic wave sensing, radar detection, has realized the interaction or data transmission between devices and users without physical contact. The widespread application of contactless technology has not only improved the convenience and hygiene of home life but also significantly enhanced the level of intelligence, bringing users unprecedented comfort and convenience. Contactless technology has become a key technology in the field of smart homes, enriching people's living experience by improving the convenience, hygiene, and intelligence level of life. Behind this technological innovation, power semiconductor devices, such as the mid-voltage MOS SL3422 from Slkor(www.slkoric.com), play a crucial role. The popularization and development of contactless technology are inseparable from the support of Slkor's high-performance semiconductor products. With the continuous increase in people's demand for convenience and security, contactless technology is gradually becoming a standard feature of the new generation of smart devices. In this process, Slkor has introduced a large number of superior performance semiconductor device products such as high, medium, and low voltage MOS field-effect transistors, thyristors, bridge stacks, power management chips LDO, AC-DC, ADC chip series, etc.

The medium-voltage MOSFET IRF540NS is an outstanding N-channel field-effect transistor, known for its high drain-source voltage, continuous drain current, low on-state resistance, and low threshold voltage. These characteristics make it an ideal choice for power management, drive control, and energy conversion in communication systems. The application of IRF540NS will further propel the development of communication technology, providing people with more convenient and efficient communication experiences.

MMBF170L is an N-channel MOSFET known for its excellent product characteristics, including appropriate drain-source voltage (60V), continuous drain current (300mA), low on-state resistance (3Ω @ 10V, 500mA), and a lower threshold voltage (2.5V @ 250uA), making it an ideal choice for applications in power management, electric motor control, charging stations, and auxiliary electronic device control.

The 2N7002KW is an N-channel MOSFET suitable for various low-power, high-efficiency circuit designs. It features a high drain-source voltage (60V) and continuous drain current (340mA), capable of withstanding certain voltage and current loads. Additionally, its low on-state resistance (1.1Ω @ 4.5V, 200mA) and low threshold voltage (1.3V @ 250μA) ensure reduced power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing reliable power control and high-performance efficiency for circuit design.

The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250uA). These features make it an ideal choice for automotive electronic systems. With the continuous advancement of automotive electronic technology, the potential of the SL30N06D will be further explored and utilized.

The BAS70W-05 is an N-channel MOSFET with a 70V drain-source voltage and a maximum forward average rectified current of 100mA. It features high current-carrying capacity, low forward voltage drop, and fast switching speed. These characteristics make the BAS70W-05 an ideal current control and voltage regulation component in medium and low-voltage switchgear systems. It not only improves the system's energy efficiency and stability but also provides multiple functions to meet the requirements of various industrial and power scenarios.

The SL2309A is a P-channel MOSFET with excellent characteristics such as -60V drain-source voltage, -2.0A continuous drain current, low on-state resistance (158mΩ@-10V,-2A), and low threshold voltage (-1.9V@-250uA). This power device is suitable for the power and control system design of electric Vertical Take-Off and Landing aircraft, providing stable and reliable power output, efficient energy utilization, and effective control for electric aircraft. It is driving continuous innovation and development in the technology of electric Vertical Take-Off and Landing aircraft.

The SL12N10 is an N-channel MOSFET with a drain-source voltage of 100V and a continuous drain current of 12A. It has gained attention for its low on-state resistance (130mΩ @ 10V, 220mA) and relatively low threshold voltage (2V @ 250uA). In the design of today's portable charging devices such as power banks and wireless chargers, MOSFETs play a crucial role. By selecting the appropriate MOSFET, charging efficiency can be improved, energy loss reduced, and the safety and reliability of the charging process ensured.

The SL4421 is a P-channel MOSFET with a -60V drain-source voltage and a -8.5A continuous drain current, known for its low on-state resistance (23mΩ at -10V, -8A) and a relatively low threshold voltage (-1.6V at 250uA). These characteristics enable the SL4421 to control, protect, and manage battery charging and discharging, making it an ideal electronic component for the application of new battery technologies, especially in situations that require high efficiency and precise control.

The SL50N06D is an N-channel MOSFET utilizing advanced Trench technology in its production. It features a high drain-source voltage (60V) and continuous drain current (50A), offering advantages such as high frequency, high current, and strong anti-impact capability. Additionally, its low on-resistance (14mΩ at 10V, 25A) and low threshold voltage (1.6V at 250μA) ensure reduced power loss during operation. This device delivers excellent switching performance, can withstand high-energy pulses under avalanche and commutation modes, providing reliable power control and efficient performance for circuit design.

The SL25N10 is an N-channel MOSFET with outstanding performance parameters. It features a high drain-source voltage (100V) and a large current-carrying capacity (25A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (35mΩ @ 10V, 15A) and low threshold voltage (1.8V @ 250μA) ensure that it can reduce power losses while operating. This device plays a crucial role in various electronic devices and circuits, providing strong support for enhancing the performance and energy efficiency of electronic equipment and systems.

The IRFR5305 is a P-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (-60V) and a large current carrying capacity (-30A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (26mΩ @ -10V, -15A) and low threshold voltage (-1.8V @ -250μA) ensure reduced power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing strong support for enhancing the performance and improving the energy efficiency of electronic equipment and systems.

The SL05N06Z is an N-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (60V) and a certain current carrying capacity (5.0A), making it very suitable for use in medium-voltage and medium-power circuit designs. In addition, its low on-state resistance (58mΩ at 10V, 3A) and low threshold voltage (1.7V at 250μA) ensure that it can reduce power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing strong support for performance enhancement and energy efficiency improvement in electronic devices and systems.

The BSS131 is an N-channel MOSFET with excellent performance characteristics. It has a high voltage tolerance (240V) and a moderate current rating (0.1A), making it ideal for low-voltage and Medium Voltage switching and power control applications. In addition, its low on-resistance (9.07Ω @ 4.5V, 0.09A) and low threshold voltage (1.4V @ 56μA) ensure reduced power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing strong support for enhancing the performance and energy efficiency of electronic equipment and systems.