In battery-powered products such as portable consumer electronics and small intelligent terminals, the integration level, charging accuracy, power consumption and package size of charging management ICs directly determine the charging safety, battery life and miniaturization level of end devices. Conventional linear charging solutions require numerous external components, feature low integration and occupy large PCB space, making them difficult to adapt to compact designs for portable products. The Slkor SL4057 is a constant current/constant voltage (CC/CV) linear charger designed specifically for single-cell lithium-ion batteries. Housed in a miniature SOT23-6 package, it integrates an on-chip power MOSFET and reverse blocking circuit, eliminating the need for external sense resistors and blocking diodes. It supports up to 500mA programmable charging current, and features thermal regulation, auto-recharge and multiple protection functions. With minimal external components and compatibility with USB and adapter power supplies, it is a highly integrated lithium battery charging solution for portable electronic devices. 1. Core Product Parameters Device Type: Single-cell lithium-ion battery linear charger Input Supply Voltage (VCC): 4.0V ~ 6.5V Float Voltage: 4.24V with ±1% accuracy Maximum Programmable Charging Current: 500mA Trickle Charge Threshold Voltage: 2.9V Standby Mode Quiescent Current: 25μA (typical) Sleep Mode Battery Leakage Current: ≤1μA Operating Ambient Temperature Range: -40℃ ~ 85℃ Thermal Regulation Trigger Junction Temperature: 135℃ Package: SOT23-6 2. Core Product Advantages 2.1 Highly Integrated Design with Minimal External Components The chip integrates a power MOSFET, current sensing circuit and reverse blocking diode on-chip, eliminating the need for external sense resistors, power transistors and isolation devices. It significantly reduces external BOM count, saves PCB footprint and lowers overall solution cost, making it especially suitable for space-constrained portable electronic designs. 2.2 Complete Charging Profile with Intelligent Thermal Regulation It supports a full three-stage charging process: trickle pre-charge, constant current charging and constant voltage charging. When battery voltage is below 2.9V, it pre-charges the battery with low current; once the voltage rises above the threshold, it switches to constant current fast charge; when approaching full charge, it enters constant voltage float charge mode, and automatically terminates charging when the current drops to 1/10 of the set value. A built-in thermal feedback loop automatically reduces charging current when the chip junction temperature exceeds 135℃, preventing overheating damage while maximizing charging rate, suitable for high-power charging scenarios. 2.3 High-Precision Charging Voltage with Programmable Charging Current With a built-in high-precision voltage reference and resistor divider network, the 4.24V float voltage achieves ±1% accuracy, meeting the charging requirements of lithium-ion and Li-polymer batteries. Charging current can be flexibly set via an external resistor connected to the PROG pin, supporting up to 500mA. It can be matched to different battery capacities for optimized charging speed, with wide adaptability. 2.4 Low-Power Standby with Multiple Protection Mechanisms Quiescent current in standby mode is as low as 25μA. When input voltage is removed, the device enters sleep mode with battery leakage current below 1μA, effectively reducing standby power loss and extending battery shelf life. It also integrates multiple protection mechanisms including undervoltage lockout (UVLO), soft-start inrush current limiting, battery reverse polarity protection and battery undervoltage protection, improving operational reliability of the charging system. 2.5 Dual Status Indicators with Auto-Recharge Function Equipped with two open-drain status output pins, CHRG and STDBY, it can visually indicate various operating states such as charging in progress, charge complete, and no-battery fault. It supports external LED indicators or connection to a host controller for status detection. The built-in auto-recharge function continuously monitors battery voltage after charging completion, and automatically starts a new charging cycle when voltage drops below the recharge threshold, keeping the battery near full charge without additional control. 2.6 Compact SMD Package for Portable Applications Adopting the ultra-compact SOT23-6 surface-mount package, the device features a small footprint, supports standard automated SMT assembly with consistent soldering quality, and fits high-density, compact PCB layouts. It is widely compatible with structural design requirements of various small portable electronic devices. 3. Main Application Fields With its high integration, minimal external components, high-precision charging and comprehensive protection features, the SL4057 is widely used in various single-cell lithium battery powered portable products: mobile phones, PDAs, MP3/MP4 players, digital cameras, electronic dictionaries, Bluetooth headsets, GPS navigators, portable intelligent terminals and small lithium battery chargers. 4. Engineering Design Guidelines Charging Current Configuration: Set charging current via an external resistor between the PROG pin and ground. Select resistance according to battery capacity: 2kΩ corresponds to 500mA, 5kΩ corresponds to 200mA. Refer to datasheet parameters for model selection. External Component Selection: It is recommended to place 1μF~10μF ceramic capacitors at the VCC input and BAT terminal respectively to filter power supply ripple and stabilize charging voltage and current. Thermal Optimization: For high-current charging scenarios, increase chip heat dissipation area through PCB copper pour to improve continuous charging capability and fully utilize the performance headroom of the thermal regulation function. Status Indicator Design: CHRG and STDBY are open-drain outputs. External pull-up resistors are required in application. They can directly drive LEDs or connect to MCU I/O ports for status acquisition. Protection Design: The chip features built-in battery reverse polarity protection. Ensure input voltage does not exceed the 6.5V upper limit to avoid overvoltage damage. It is recommended to widen input power traces to reduce the impact of line loss on charging accuracy. 5. Product Summary The Slkor SL4057 is a highly integrated single-cell lithium-ion battery linear charging IC in a miniature SOT23-6 package. It integrates on-chip power transistors and sensing circuits, requires minimal external components, and delivers ±1% charging voltage accuracy, 500mA programmable current and a complete three-stage charging process. With thermal regulation, auto-recharge, dual status indicators and comprehensive protection functions, it balances charging performance, power consumption and design convenience, serving as a cost-effective domestic charging solution for various portable consumer electronics lithium battery applications. Slkor introductionAccording to Song Shiqiang, Slkor Semiconductor (https://www.slkormicro.com) grandly opened its third franchised store in Huaqiangbei on August 14, 2026. The store mainly offers MOSFETs, power-management ICs, Hall elements, optocouplers, IGBTs, SiC silicon-carbide components, AC/DC devices, TVS diodes, Schottky diodes, thyristors and other electronic components.SL4057 To Product Pag

In high-power power electronic systems such as industrial inverters, inverter welders, UPS power supplies, photovoltaic energy storage converters and induction heating equipment, the voltage withstand capability, current carrying capacity, heat dissipation performance and wide-temperature reliability of power devices directly determine the overall efficiency and operational safety of the whole equipment. The Slkor SL50T120FZ is a high-power Insulated Gate Bipolar Transistor (IGBT) discrete device packaged in TO-264. It features 1200V high collector-emitter voltage resistance, 50A continuous current rating at 100℃ case temperature, 535W high power dissipation and a wide junction temperature range from -55℃ to 175℃. With excellent heavy-load output capacity, low loss and superior thermal stability, it serves as a high-quality domestic alternative core power device for industrial high-power conversion equipment. 1. Core Electrical Parameters Device Type: Single IGBT Discrete Collector-Emitter Voltage (VCE): 1200V Collector Current (IC @ TC=100℃): 50A Total Power Dissipation (PD @ TC=25℃): 535W Operating Junction Temperature (TJ): -55℃ ~ 175℃ Package: TO-264 2. Core Product Advantages 2.1 1200V High Voltage Resistance with Sufficient Safety Margin Equipped with 1200V high collector-emitter withstand voltage, the SL50T120FZ effectively suppresses circuit surge voltage and spike pulse impact, greatly reducing the risk of device breakdown and failure. Fully adapted to high-power industrial conversion scenarios with 380V AC input, it meets strict safety design requirements of high-voltage inverter systems and delivers outstanding voltage impact resistance. 2.2 50A High Continuous Current for Stable Heavy-Duty Operation Maintaining a continuous collector current of 50A even at a high case temperature of 100℃, the device exhibits excellent high-temperature current-carrying performance. It ensures stable current output during long-term full-load operation without power derating or insufficient output power, perfectly matching continuous heavy-load working conditions of welding machines, frequency converters and other industrial equipment. 2.3 TO-264 High-Power Package for Excellent Heat Dissipation Adopting the standard TO-264 through-hole power package with a large-area metal thermal base, the device features low thermal resistance and can be closely fitted with external heat sinks for efficient heat conduction. With a high power dissipation of 535W, it withstands extreme power loss, relieves thermal accumulation under high-load conditions and significantly improves long-term operational reliability of the whole system. 2.4 Ultra-Wide Temperature Adaptation for Harsh Industrial Scenarios Supporting an ultra-wide junction temperature range of -55℃ to 175℃, the SL50T120FZ operates stably in extremely low-temperature outdoor environments and high-temperature enclosed chassis conditions. It resists severe cold and thermal shock, fully adapting to complex and harsh industrial working environments. 2.5 Optimized Loss Characteristics for Higher System Efficiency Adopting mature trench gate field-stop technology, the device balances low conduction loss and low switching loss, delivering excellent high-speed switching performance. It effectively reduces thermal loss during power conversion, improves overall energy conversion efficiency and lowers system heat dissipation costs. 2.6 Reliable Domestic Replacement with Stable Mass Production Quality Backed by Slkor’s mature power semiconductor mass-production process, the SL50T120FZ features consistent electrical parameters and strong short-circuit withstand capability. It provides pin-to-pin compatibility with imported equivalent IGBT devices, effectively solving industry pain points such as long lead times, insufficient supply and high costs of imported components, making it ideal for large-scale industrial mass production. 3. Main Application Fields With integrated advantages of high voltage resistance, large current capacity, excellent heat dissipation and wide-temperature stability, the Slkor SL50T120FZ is widely applied in various high-power power electronic devices, including industrial frequency converters, servo drive power supplies, inverter welding machines, plasma cutting equipment, UPS uninterruptible power supplies, photovoltaic inverters, energy storage converters, induction heating equipment, high-power switching power supplies, industrial motor drives and high-power charging pile power units. 4. Engineering Design Guidelines Voltage Margin Design: Reserve sufficient voltage margin in practical applications. Avoid long-term operation close to the 1200V extreme rating to prevent device damage caused by voltage surges. Thermal Management: Equip the TO-264 package with a properly rated heat sink and apply thermal grease evenly. Monitor case temperature and junction temperature during long-term high-power operation to avoid over-temperature failure. Gate Drive Matching: As a voltage-driven IGBT device, it requires matched gate drive voltage and gate resistance to optimize switching speed, suppress oscillation and reduce switching loss and electromagnetic interference. Parallel Operation Suggestion: For capacity expansion via parallel connection, screen devices with consistent parameters and implement current sharing design. Utilize the positive temperature coefficient of saturation voltage drop to ensure balanced current distribution. Operating Limit: Do not operate beyond the rated current, power dissipation and junction temperature range. Pay close attention to pulse width and heat dissipation conditions for pulsed operating scenarios. 5. Product Summary The Slkor SL50T120FZ is an industrial-grade high-power IGBT discrete device in TO-264 package. Featuring 1200V high voltage resistance, 50A high-temperature current capacity, 535W high power dissipation and -55℃~175℃ ultra-wide junction temperature range, it integrates high voltage endurance, high-temperature heavy-load performance, excellent heat dissipation and low-loss characteristics. It is perfectly suitable for industrial inverter, welding, energy storage and high-power power supply scenarios, serving as a cost-effective and reliable domestic alternative for high-power IGBT discrete devices.Slkor introductionAccording to Song Shiqiang, Slkor Semiconductor (https://www.slkormicro.com) grandly opened its third franchised store in Huaqiangbei on August 14, 2026. The store mainly offers MOSFETs, power-management ICs, Hall elements, optocouplers, IGBTs, SiC silicon-carbide components, AC/DC devices, TVS diodes, Schottky diodes, thyristors and other electronic components.SL50T120FZ To Product Pag

For battery-powered portable electronics, IoT terminals and small home appliances, non-contact magnetic detection switches impose strict requirements on standby power consumption, magnetic-pole anti-interference performance and long-term battery life. Mechanical contact switches suffer from wear and oxidation, resulting in short service life and false triggering. The Slkor SL1719SH is a single S-pole responsive micro-power Hall switch sensor in TO-92S through-hole package. It responds only to S-pole magnetic field, features an ultra-low average operating current of 0.9 μA with 25 Hz intermittent scanning and a maximum supply voltage of 5.5 V. Characterized by ultra-low standby power, directional magnetic-pole detection and stable switching output, it serves as a cost-effective domestic sensor chip for non-contact position sensing and open-close judgment in battery-operated products. 1. Core Electrical Parameters Device Type: Single S-Pole Hall Switch Sensor Polarity: S-pole only (triggered by S-pole magnetic field only) Supply Voltage (VDD): 5.5 V Average Operating Current (IDD): 0.9 μA Scanning Frequency: 25 Hz Package: TO-92S 2. Core Product Advantages 2.1 Directional S-Pole Sensing with Strong Anti-Interference Capability The chip only responds to S-pole magnetic-field signals; N-pole magnetic field will not trigger action. It effectively avoids false triggering caused by stray magnetic fields or reversed-magnet installation. Ideal for designs with fixed magnet polarity, it improves overall system detection reliability. 2.2 Nano-Ampere-Level Ultra-Low Power Consumption Extends Battery Life Adopting intermittent sleep-wake-up scanning mechanism, the average operating current is as low as 0.9 μA. Extremely low static power draw greatly reduces power drain for battery-powered equipment and significantly prolongs service life of dry-cell and lithium-battery powered end products. 2.3 25 Hz Low-Speed Scanning Optimized for Open-Close Position Detection The 25 Hz sampling rate is designed for low-speed status detection, meeting requirements for open-close state, limit position and magnet-presence judgment. It is not suitable for scenarios with rapidly changing magnetic fields and delivers outstanding performance in low-power detection applications. 2.4 TO-92S Through-Hole Package for Easy Assembly and Debugging Standard 3-pin TO-92S through-hole package features mature soldering process, convenient manual welding and mass through-hole PCB production. It can directly replace traditional reed switches and mechanical contact switches. 2.5 Wide-Voltage Compatibility and Stable Output Performance Maximum supply voltage reaches 5.5 V, compatible with lithium-battery, 3.3 V and 5 V MCU systems. Built-in temperature compensation circuit minimizes switch-point drift under varying temperatures. CMOS push-pull output can connect to MCU I/O pins directly without extra pull-up resistors. 2.6 Mature Domestic Solution with Stable Supply Mass-production-validated Slkor SL1719SH guarantees consistent parameters and excellent ESD protection. It provides pin-to-pin compatibility with overseas equivalent single-S-pole low-power Hall sensors, easing pain points such as long lead-time and high cost of imported components for large-volume consumer-grade projects. 3. Main Application Fields Benefiting from single-S-pole sensing, micro-power consumption and through-hole package, SL1719SH is widely adopted in battery-powered devices: charging-case open-close detection, magnetic-actuated switches for small home appliances, smart door locks, valve position monitoring, water / gas flow meters, wireless door-magnet detectors, low-power IoT sensor nodes, toy limit sensing, portable test instruments and various non-contact proximity switches. 4. Engineering Design Guidelines Magnet-Pole Matching: This device responds only to S-pole. Ensure the S-pole faces the chip sensing surface in hardware design; N-pole cannot trigger output. Double-check magnet mounting orientation. Power & Frequency Notice: The sensor works on 25 Hz intermittent scanning for low-speed status detection only. Do not use it for fast-changing magnetic-field conditions. Power-Supply Design: Do not exceed 5.5 V supply voltage. Place a decoupling capacitor close to the power-supply pin to suppress power-supply noise. Output Connection: Push-pull output; external pull-up resistor is not required. Connect directly to MCU I/O ports for level reading. Magnet-to-Chip Distance: Properly set the gap between magnet and sensor to guarantee sufficient magnetic-field strength for reliable triggering. Temperature Range: Operating temperature: -40 ℃ ~ +85 ℃. Avoid operation beyond this temperature range. 5. Product Summary Slkor SL1719SH is a single-S-pole low-power Hall-effect switch sensor in TO-92S package. It supports maximum 5.5 V supply voltage, 0.9 μA ultra-low operating current and 25 Hz scanning frequency. Triggered exclusively by S-pole magnetic field, it features good stray-magnetic-field immunity and ultra-low power consumption. Well-suited for non-contact open-close and position detection in battery-powered equipment, it serves as an ideal domestic replacement for mechanical switches and reed switches.Slkor introductionAccording to Song Shiqiang, Slkor Semiconductor (https://www.slkormicro.com) grandly opened its third franchised store in Huaqiangbei on August 14, 2026. The store mainly offers MOSFETs, power-management ICs, Hall elements, optocouplers, IGBTs, SiC silicon-carbide components, AC/DC devices, TVS diodes, Schottky diodes, thyristors and other electronic components.SL1719SH To Product Pag

In consumer audio products such as Bluetooth speakers, portable players, laptops and small home appliance voice prompt devices, the conversion efficiency, heat generation, peripheral circuit complexity and voltage adaptability of power amplifier chips directly determine the overall sound quality, battery life and PCB layout difficulty of terminal equipment. Traditional Class-AB power amplifiers suffer from high heat generation and low efficiency, requiring numerous peripheral components and hindering miniaturized product design. The Slkor PAM8403 is a filter-free Class-D stereo audio power amplifier packaged in SOP-16. It delivers up to 3W single-channel output power, supports a wide supply voltage range from -0.3V to 5.5V, and features low operating current and ultra-low standby current. With the advantages of high efficiency, low heat dissipation and minimal peripheral components, it serves as a cost-effective domestic amplifier solution for battery-powered audio devices. 1. Core Product Parameters Device Type: Class-D Stereo Audio Power Amplifier Supply Voltage (VDD): -0.3V ~ 5.5V Operating Temperature (TA): -40℃ ~ 85℃ Single-channel Output Power (Po): 3W Operating Quiescent Current (IDD): 6.3mA Shutdown Standby Current (ISD): 16μA Package: SOP-16 2. Core Product Advantages 2.1 Filter-Free Class-D Architecture Simplifies Hardware Design Adopting a proprietary filter-free design, the PAM8403 can directly drive speakers without traditional output low-pass filter circuits. It greatly reduces peripheral BOM components, saves valuable PCB layout space, lowers overall material costs, and shortens product development cycles, perfectly catering to lightweight and miniaturized audio product design trends. 2.2 High Conversion Efficiency and Low Heat Generation Extend Battery Life Featuring a maximum conversion efficiency of 90%, the chip effectively reduces power loss compared with conventional Class-AB amplifiers. It generates extremely low heat during operation and requires no additional heat sink in most working conditions. Ideal for 3.7V lithium battery and 5V USB-powered portable devices, it significantly improves equipment endurance and battery utilization efficiency. 2.3 Wide Voltage Adaptability Compatible with Mainstream Power Systems Supporting a wide voltage range of -0.3V to 5.5V, the chip is fully compatible with mainstream power supply modes such as lithium batteries and USB 5V power supplies. Equipped with an independent shutdown control pin, it reduces standby current to only 16μA in sleep mode, effectively lowering idle power consumption and meeting low-power design requirements of portable electronic products. 2.4 Low Distortion and Low Noise for Clear Sound Quality The PAM8403 achieves ultra-low total harmonic distortion (THD+N) and minimal background noise, delivering pure and stereo sound output. Built-in short-circuit protection and over-temperature shutdown protection functions effectively avoid chip damage caused by abnormal operating conditions, greatly improving the stability and service life of audio equipment. 2.5 Standard SOP-16 Package for Mass Production Packaged in standard SOP-16 SMD form factor, the device supports automated SMT mounting with mature welding technology and compact size, suitable for high-density PCB layout. Verified by large-scale mass production, Slkor PAM8403 features stable parameter consistency and pin-to-pin compatibility with imported equivalent chips. It solves the industry pain points of long lead times and high costs of imported devices, supporting stable mass production supply. 3. Main Application Fields With the comprehensive strengths of high efficiency, low power consumption, low noise and simple peripheral circuits, the Slkor PAM8403 is widely used in various small-power stereo audio scenarios: Bluetooth portable speakers, laptop audio output, display and TV sound systems, portable DVD players, game consoles, walkie-talkie hands-free systems, small home appliance voice prompters, smart toys, DIY audio modules, USB-powered mini speakers, and IoT voice broadcast terminals. 4. Engineering Design Guidelines Power Supply Design: Do not exceed the maximum 5.5V supply voltage. Place decoupling capacitors close to power pins to suppress power noise and optimize audio background noise performance. Load Matching: Recommended to match 4Ω~8Ω speakers. It can achieve 3W stable output power with 4Ω load under 5V power supply. Shutdown Pin Control: The shutdown pin can be controlled by MCU to realize sleep switching, effectively reducing system standby power consumption during idle state. PCB Layout: Keep power output traces short and thick. Isolate audio input traces from power loops to avoid electromagnetic interference and audio noise. Protection Instructions: Built-in short-circuit and thermal shutdown protections are designed for fault protection only. Do not operate the chip under long-term short-circuit conditions. Temperature Range: The normal operating temperature range is -40℃ to 85℃. Operation beyond the specified range is prohibited to ensure stable performance. 5. Product Summary The Slkor PAM8403 is a SOP-16 packaged 3W dual-channel Class-D audio power amplifier chip, featuring wide voltage support (-0.3V~5.5V), low operating current (6.3mA), ultra-low shutdown current (16μA) and wide temperature adaptability (-40℃~85℃). With filter-free architecture, high efficiency, low heat generation and minimal peripheral components, it balances excellent sound quality and low power consumption. It is the preferred cost-effective domestic alternative solution for various USB and battery-powered mini stereo audio devices in the consumer electronics industry.

In high-frequency circuit systems such as wireless communication, microwave oscillation, RF reception and cable TV signal processing, the noise performance, frequency band adaptability, signal linearity and parasitic parameters of devices greatly affect the signal transmission quality and operational stability of the whole equipment. Conventional general-purpose transistors have limited high-frequency performance with relatively high noise and large parasitic junction parameters, making them unsuitable for weak signal amplification in GHz-band circuits. The Slkor BFR360F is an NPN silicon microwave RF transistor packaged in compact SOT-323 SMD form factor. Optimized for low-current high-frequency operation and compatible with 3.3V~5V common DC power supply systems, it is widely applied in high-frequency amplification and microwave oscillation circuits, serving as a well-adapted domestic device for civilian high-frequency RF circuit designs. 1. Core Product Parameters Device Type: NPN High-Frequency RF Transistor Collector-Emitter Voltage (VCEO): 6V Collector Current (IC): 35mA Power Dissipation (PD): 300mW Collector-Emitter Saturation Voltage (VCE(sat)): 6V Transition Frequency (fT): 12GHz Package: SOT-323 2. Core Product Features 2.1 Excellent Low-Noise RF Performance The device features a noise figure of approximately 1.0dB at 1.8GHz, delivering reliable noise suppression capability. It effectively reduces background noise interference in RF circuits, amplifies weak high-frequency signals clearly, and improves signal fidelity and reception sensitivity of RF receiving circuits, suitable for various precision high-frequency signal processing scenarios. 2.2 Wide-Band High-Frequency Adaptability With a transition frequency of 12GHz, the device exhibits stable high-frequency response. It supports signal amplification for oscillation circuits within 4.0GHz, covering mainstream civilian RF and microwave frequency bands. It fulfills multiple circuit functions including signal amplification, circuit oscillation and signal mixing with versatile scenario adaptability. 2.3 Stable Signal Output with Optimized Electrical Characteristics Featuring low leakage current and small junction capacitance, the device mitigates signal attenuation and phase deviation during high-frequency operation. Equipped with moderate dynamic range and favorable current linearity, it maintains low signal distortion and smooth output waveforms, ensuring steady operation of high-frequency circuits. 2.4 Compatibility with Conventional Low-Voltage Systems Designed for 3.3V~5V collector DC power supply, the device matches the mainstream power architecture of consumer electronics, miniature wireless devices and IoT modules. With a rated operating current of 35mA, it fits low-current continuous operation and supports lightweight, low-power high-frequency circuit design. 2.5 Miniature Package for Miniaturized Mass Production Adopting the compact SOT-323 SMD package, the device occupies minimal PCB space and supports automated SMT mounting with stable soldering performance for mass production. Backed by Slkor’s mature manufacturing process, it delivers consistent parameter performance and provides pin-to-pin compatibility with imported equivalent devices, featuring stable supply and favorable cost performance. 3. Main Application Fields Leveraging reliable high-frequency performance, low-noise characteristics and stable linear output, the Slkor BFR360F is widely used in civilian high-frequency microwave circuits, including cable TV signal amplification modules, satellite TV tuning and receiving circuits, RF units for wireless intercoms, cordless phone communication modules, radar induction circuits, wireless remote control and data transmission modules, RFID radio frequency identification systems, optical fiber communication signal amplification circuits, as well as amplifiers, oscillators, mixers and detectors for VHF and UHF bands. It is well suited for small-sized high-frequency wireless devices powered by 3.3V~5V voltage. 4. Engineering Design Guidelines Operating Condition Matching: Optimized for low-voltage and low-current high-frequency scenarios. Design strictly according to rated voltage, current and power specifications to ensure long-term operational stability. PCB Layout Optimization: High-frequency circuits are sensitive to wiring. Keep RF input and output traces short and tidy with proper impedance matching to minimize parasitic interference on high-frequency signals. Power Supply Noise Reduction: Deploy high-frequency decoupling capacitors near power pins to filter power supply clutter, suppress crosstalk from digital circuits and guarantee pure RF signal quality. ESD Protection: High-frequency semiconductor devices are sensitive to static electricity. Standard ESD protection procedures are required during welding and assembly to avoid performance damage caused by static discharge. 5. Product Summary The Slkor BFR360F is an NPN RF transistor tailored for civilian high-frequency applications. Benefiting from 12GHz transition frequency, 1.0dB low noise at 1.8GHz, stable current linearity and small junction capacitance, it supports microwave signal amplification and oscillation within 4GHz. Compatible with 3.3V~5V low-voltage power supply and equipped with miniature SOT-323 package, it balances excellent performance, compact size and practicality. As a reliable domestic replacement device, it delivers outstanding adaptability for miniature wireless high-frequency equipment and civilian RF small-signal circuit design.Slkor introductionAccording to Song Shiqiang, Slkor Semiconductor (https://www.slkormicro.com) grandly opened its third franchised store in Huaqiangbei on August 14, 2026. The store mainly offers MOSFETs, power-management ICs, Hall elements, optocouplers, IGBTs, SiC silicon-carbide components, AC/DC devices, TVS diodes, Schottky diodes, thyristors and other electronic components.BFR360F To Product Pag

In power electronic systems such as industrial motor drives, variable frequency speed regulation and small inverters, the durability, switching performance, temperature rise behavior and anti-interference capability of IGBT devices directly affect the operational stability and service life of the whole equipment. The Slkor SL15T65FK is an IGBT discrete device designed for industrial control scenarios. Packaged in TO-263, it features a collector-emitter voltage of 650V, a continuous collector current of 15A at 100℃ case temperature, a rated power dissipation of 182W at 25℃ ambient temperature, and a wide junction temperature range from -40℃ to 175℃. With a positive temperature coefficient of saturation voltage, a soft fast-recovery anti-parallel diode and low electromagnetic interference characteristics, it fits industrial scenarios such as motor control inverters, serving as a cost-effective power switching solution for low and medium-power industrial drive systems. 1. Core Product Parameters Device Type: IGBT discrete device (with built-in anti-parallel diode)Collector-Emitter Voltage (VCE): 650VCollector Current (IC @ TC=100℃): 15ATotal Power Dissipation (PD @ TC=25℃): 182WOperating Junction Temperature Range (TJ): -40℃ ~ 175℃Package: TO-263 2. Core Product Advantages 2.1 High-Durability Design for Long-Cycle Industrial Operation The device structure and manufacturing process are optimized for continuous operation scenarios such as industrial motor control, improving the impact resistance and long-term operational reliability of the device. It adapts to industrial working conditions with frequent start-stop and load fluctuation, ensuring long-term stable operation of equipment. 2.2 Positive Temperature Coefficient of VCE(sat) for Balanced Parallel Current Sharing The saturation voltage drop features a positive temperature coefficient, which rises as the device temperature increases. When multiple devices are applied in parallel, it can automatically balance the current of each device, reduce the risk of local overheating caused by current bias, and improve the operational stability of multi-device parallel systems. 2.3 Soft & Fast Recovery Anti-Parallel Diode for Reduced Switching Stress The built-in anti-parallel diode features soft recovery characteristics and fast recovery speed. It can effectively suppress voltage spikes and current surges during reverse recovery, reduce the switching stress of the device, and cut down the loss caused by the diode recovery process, improving the overall energy conversion efficiency. 2.4 Low Electromagnetic Interference for Optimized System EMC Performance The gentle switching process can effectively reduce the di/dt and dv/dt values in the circuit, decrease the generation of electromagnetic interference, lower the difficulty of system EMC filtering design, and adapt to industrial control scenarios with high electromagnetic compatibility requirements. 2.5 Wide Junction Temperature Range for Strong Environmental Adaptability Supporting a junction temperature range from -40℃ to 175℃, it can adapt to temperature fluctuations under different working conditions, operate stably even in environments with high temperature rise inside the chassis, and meet the demands of both low-temperature startup and high-temperature heavy-load operation. 2.6 TO-263 SMD Package with Excellent Heat Dissipation & Assembly Compatibility Adopting the TO-263 surface-mount power package, the metal heat dissipation base can be directly attached to the PCB heat dissipation area or an external heat sink, with a short heat conduction path and excellent heat dissipation efficiency. Meanwhile, it is compatible with automated SMT mounting processes, suitable for batch industrial production. 3. Main Application Fields With its durability, excellent diode characteristics and low interference advantages, the SL15T65FK is mainly used in various low and medium-power motor control and inverter scenarios: industrial motor drive frequency converters, servo drives, small inverter power supplies, home appliance frequency conversion controllers, electric tool speed regulation circuits, photovoltaic micro-inverters, UPS power stages, etc. 4. Engineering Design Guidelines Voltage Margin: It is recommended to reserve an appropriate voltage margin in practical applications, avoid long-term operation close to the rated withstand voltage, and reduce the breakdown risk caused by surge voltage. Thermal Design: The TO-263 package shall be matched with a corresponding heat dissipation scheme according to the actual working current and duty cycle, to ensure the device junction temperature is within the specified range and improve operational reliability. Drive Matching: Select appropriate gate drive parameters to balance switching speed and electromagnetic interference level, and take into account both device loss and system EMC performance. Parallel Application: When multiple devices are connected in parallel, the positive temperature coefficient characteristic of the device can be utilized, and devices with good parameter consistency are preferred to ensure current sharing effect. Diode Application: The built-in anti-parallel diode can be used in freewheeling scenarios. If it needs to withstand large reverse current surges, the diode parameters shall be verified in combination with actual working conditions. 5. Product Summary The Slkor SL15T65FK is an industrial-grade IGBT discrete device in TO-263 package. It features 650V voltage withstand, 15A current carrying capacity at 100℃ case temperature and a maximum junction temperature of 175℃. With a positive temperature coefficient of saturation voltage, a soft fast-recovery anti-parallel diode and low electromagnetic interference characteristics, it delivers outstanding durability. Suitable for various low and medium-power industrial power electronic scenarios such as motor control inverters, it is a reliable choice among domestic power devices that balances performance and cost. Slkor introductionAccording to Song Shiqiang, Slkor Semiconductor (https://www.slkormicro.com) grandly opened its third franchised store in Huaqiangbei on August 14, 2026. The store mainly offers MOSFETs, power-management ICs, Hall elements, optocouplers, IGBTs, SiC silicon-carbide components, AC/DC devices, TVS diodes, Schottky diodes, thyristors and other electronic components.SL15T65FK To Product Pag

In low-power switching power supplies, consumer electronic adapters, LED drivers, battery chargers and other circuits, rectifier diodes play a core role in AC-to-DC conversion and reverse blocking. The withstand voltage, leakage performance, surge tolerance and package reliability of the device directly affect the operational stability and service life of the power system. The Slkor SM4007PL (market model: A7) is a general-purpose plastic-encapsulated rectifier diode in a miniature SOD-123 package. It features a rated repetitive peak reverse voltage of 1000V, supports an average forward rectified current of 1.0A, and delivers low reverse leakage, high forward surge capability and high-temperature soldering compatibility. Suitable for various low-power rectification scenarios, it serves as a cost-effective rectifier solution for consumer electronics and industrial auxiliary power applications. 1. Core Product Parameters Device Type: General-purpose plastic-encapsulated rectifier diode Repetitive Peak Reverse Voltage (VRRM): 1000V DC Blocking Voltage (VDC): 1000V Average Forward Rectified Current (IO(AV), TA=75℃): 1.0A Peak Forward Surge Current (IFSM): 30A Typical Forward Voltage (VF, @1.0A): 1.1V Typical Reverse Recovery Time (trr): 30μs Operating Junction Temperature Range (TJ): -50℃ ~ +175℃ Package: SOD-123 plastic encapsulation 2. Core Product Features 2.1 1000V Withstand Voltage for General Rectification Scenarios With a rated reverse withstand voltage of 1000V, it covers the rectification input requirements of most low-power offline power supplies and adapters. It can be used in various topologies such as single-diode rectification and bridge rectification, and adapts to high-voltage rectification conditions on the AC input side with wide scenario applicability. 2.2 Low Reverse Leakage for Reduced Standby Loss The device features low reverse leakage current, maintaining minimal leakage loss at rated blocking voltage. It helps reduce the standby power consumption of power systems and improve overall energy efficiency. Meanwhile, the increase in leakage current under high-temperature conditions is well controlled, ensuring rectification performance in high-temperature environments. 2.3 High Surge Withstand Capability Against Startup Inrush With a peak forward surge current tolerance of 30A, it can withstand the inrush current at power-on, reduce the risk of device damage caused by startup spikes, and improve the long-term operational reliability of the whole equipment. 2.4 Reliable Molding Process for Mass Production Adopting void-free molded plastic technology, the plastic body meets UL 94V-0 flammability rating with excellent safety performance. It supports high-temperature soldering at 250℃ for 10 seconds, compatible with standard wave soldering and reflow soldering processes, and meets relevant solderability standards, suitable for automated SMT mass production. The axial lead design allows flexible mounting positions, and the compact size and light weight fit compact PCB layouts. 2.5 Wide Junction Temperature Range for Strong Environmental Adaptability Supporting a junction temperature range from -50℃ to +175℃, it adapts to temperature fluctuations in different regions and working conditions, meets the demands of both low-temperature startup and high-temperature full-load operation, and operates stably in consumer electronics, industrial auxiliary power and other scenarios. 3. Main Application Fields With balanced electrical performance and reliable plastic package quality, the SM4007PL (A7) is widely used in various low-power rectification scenarios: low-power switching power supplies, power adapters, mobile phone chargers, LED driving power supplies, battery charging circuits, home appliance control board rectifier units, small appliance power modules, signal rectification circuits, input rectification of industrial auxiliary power supplies, etc. 4. Engineering Design Guidelines Soldering Specifications: Refer to the high-temperature soldering condition of 250℃ for 10 seconds during soldering. Avoid prolonged high-temperature soldering to prevent plastic body damage and device performance drift. Voltage Margin: It is recommended to reserve an appropriate voltage margin in practical applications, avoid long-term operation close to the rated withstand voltage, and reduce the breakdown risk caused by surge voltage. Thermal Design: For 1.0A current rating, design the thermal scheme according to the actual duty cycle to ensure the device junction temperature is within the specified range and improve long-term operational stability. Parallel Operation: When multiple devices are used in parallel, it is recommended to select devices with good parameter consistency, and 搭配 current sharing measures if necessary to ensure balanced current distribution. Storage and Handling: As a plastic-encapsulated semiconductor device, pay attention to moisture protection and mechanical stress during storage and assembly to avoid lead deformation and plastic body damage. 5. Product Summary The Slkor SM4007PL (A7) is a general-purpose plastic-encapsulated rectifier diode in SOD-123 package. It features 1000V reverse withstand voltage, 1.0A forward rectification capability and 30A surge tolerance, paired with low reverse leakage, reliable flame-retardant plastic package and wide-temperature operating characteristics. With balanced parameters and mature technology, it can be widely adapted to various low-power power supply and rectification circuits, serving as a reliable and cost-effective domestic device choice for low-power rectification scenarios.Slkor introductionAccording to Song Shiqiang, Slkor Semiconductor (https://www.slkormicro.com) grandly opened its third franchised store in Huaqiangbei on August 14, 2026. The store mainly offers MOSFETs, power-management ICs, Hall elements, optocouplers, IGBTs, SiC silicon-carbide components, AC/DC devices, TVS diodes, Schottky diodes, thyristors and other electronic components.SM4007PL A7 To Product Pag

In power electronic circuits such as switching power supplies, power adapters, home appliance control boards and LED drivers, rectifier diodes perform the core function of AC-to-DC conversion, and surface-mount devices are increasingly advantageous for product miniaturization and automated mass production. The Slkor S2M is a surface-mount general-purpose silicon rectifier diode in an SMA package. Featuring a glass passivated chip junction, it delivers a maximum repetitive peak reverse voltage of 1000V and an average forward rectified current of 2A. With low reverse leakage, high surge withstand capability and RoHS-compliant lead-free construction, it supports high-density SMT production and serves as a highly reliable domestic device solution for low and medium-power rectification scenarios. 1. Core Product Parameters Device Type: Surface-mount general-purpose silicon rectifier diode Maximum Repetitive Peak Reverse Voltage (VRRM): 1000V Maximum DC Blocking Voltage (VDC): 1000V Maximum Average Forward Rectified Current (IF(AV)): 2A Peak Forward Surge Current (IFSM, 8.3ms single half-sine wave): 50A Forward Voltage (VF, @2A): 1.1V DC Reverse Current (IR, @25°C rated voltage): 5μA Typical Junction Capacitance (CJ): 25pF Thermal Resistance (RθJA): 65°C/W Operating Junction and Storage Temperature Range: -55℃ ~ +150℃ Package: SMA surface-mount plastic package 2. Core Product Advantages 2.1 Glass Passivated Chip Junction for Stable and Reliable Performance Adopting glass passivated chip junction technology, the device optimizes reverse characteristics and high-temperature stability. It delivers excellent reverse leakage control, reduces performance drift during long-term operation, improves continuous operational reliability, and is suitable for rectification applications with extended power-on time. 2.2 1000V Withstand Voltage and 2A Current Rating Cover Mainstream Rectification Needs With a 1000V repetitive peak reverse voltage and 2A average forward rectified current, it meets the bridge rectification and single-diode rectification requirements of most low and medium-power offline power supplies and adapters. It adapts to high-voltage rectification conditions on the AC input side and applies to a wide range of scenarios. 2.3 High Surge Withstand Capability Against Startup Inrush It supports a peak forward surge current of up to 50A under 8.3ms single half-sine wave conditions, withstanding inrush current at power-on, reducing the risk of device damage caused by startup current spikes, and improving the long-term durability of the overall system. 2.4 SMA Low-Profile SMD Package for Automated Mass Production The SMA low-profile surface-mount package features a compact footprint, saves PCB layout space and supports high-density circuit design. The device form factor facilitates pick-and-place assembly, is compatible with standard SMT reflow soldering processes, and complies with EU RoHS Directive 2011/65/EU for lead-free construction, making it suitable for large-scale automated production. 2.5 Wide Temperature Range for Strong Environmental Adaptability Supporting an operating junction temperature range from -55℃ to +150℃, it adapts to temperature fluctuations across different regions and working conditions, meets the demands of both low-temperature startup and high-temperature full-load operation, and operates stably in consumer electronics, industrial auxiliary power and various other scenarios. 3. Main Application Fields With balanced electrical performance and reliable SMD package quality, the S2M is widely used in various low and medium-power rectification scenarios: switching power supplies, AC/DC power adapters, battery chargers, LED driving power supplies, home appliance control board rectifier units, small appliance power modules, input rectification for industrial auxiliary power supplies, signal rectification circuits, and front-end rectification for inverters. 4. Engineering Design Guidelines Soldering Process: Compatible with standard reflow soldering processes. Set soldering parameters according to the device’s temperature tolerance; avoid prolonged over-temperature soldering to prevent performance drift and package damage. Voltage Margin: It is recommended to reserve a reasonable voltage margin in practical applications, avoid long-term operation close to the rated withstand voltage, and reduce the breakdown risk caused by surge voltage. Thermal Design: Design the thermal scheme based on actual operating current, duty cycle and ambient temperature to ensure the device junction temperature stays within the specified range and improve long-term operational stability. Load Derating: For capacitive load applications, a 20% derating of forward current is recommended to ensure safe device operation. PCB Layout: Design PCB land patterns according to the recommended pad dimensions to ensure soldering reliability and device heat dissipation performance. 5. Product Summary The Slkor S2M is a 1000V 2A surface-mount general-purpose silicon rectifier diode in an SMA package. It adopts glass passivated chip junction technology, delivering stable reverse characteristics, high surge withstand capability and wide-temperature performance. The low-profile SMD package supports automated mass production and meets RoHS environmental requirements. With balanced parameters and mature technology, it is widely adaptable to various low and medium-power power supply and rectification circuits, serving as a high-quality domestic device choice that balances reliability and cost for surface-mount rectification applications. Slkor introductionAccording to Song Shiqiang, Slkor Semiconductor (https://www.slkormicro.com) grandly opened its third franchised store in Huaqiangbei on August 14, 2026. The store mainly offers MOSFETs, power-management ICs, Hall elements, optocouplers, IGBTs, SiC silicon-carbide components, AC/DC devices, TVS diodes, Schottky diodes, thyristors and other electronic components.S2M To Product Pag

In circuit designs such as portable consumer electronics, lithium battery protection, small load switches and low-power power management, the conduction loss, switching speed, drive compatibility and package size of low-power MOSFETs directly affect the battery life and miniaturization level of end equipment. The Slkor FDV305N is an N-channel trench power MOSFET (TrenchFET) in a miniature SOT-23 surface-mount package. It features a drain-source breakdown voltage of 20V and a continuous drain current of 0.9A, with low on-resistance, low gate charge and low-voltage drive compatibility. Suitable for various low-voltage low-power control scenarios, it serves as a cost-effective power switching solution for portable electronics and small power systems. 1. Core Product Parameters Device Type: N-Channel Trench Power MOSFET (TrenchFET) Drain-Source Breakdown Voltage (VDS): 20V Gate-Source Voltage (VGS): ±12V On-Resistance (RDS(on)): 220mΩ max. @ VGS=4.5V, ID=0.9A; 300mΩ max. @ VGS=2.5V, ID=0.7A Continuous Drain Current (ID, TC=25℃): 0.9A Pulsed Drain Current (IDM): 2.0A Maximum Power Dissipation (PD, TC=25℃): 0.35W Gate Threshold Voltage (VGS(th)): 0.6V ~ 1.5V Total Gate Charge (Qg): 0.8nC typical Maximum Operating Junction Temperature (TJ): 150℃ Storage Temperature Range: -50℃ ~ 155℃ Package: SOT-23 surface-mount 2. Core Product Advantages 2.1 TrenchFET Architecture with Low Conduction Loss Built with TrenchFET process technology, the device delivers optimized conduction performance. With a typical on-resistance of only 170mΩ at 4.5V gate drive, it effectively reduces power loss in the on-state, improves circuit energy conversion efficiency, and fits low-voltage low-current operating scenarios. 2.2 Low Gate Charge for Fast Switching Response The device features a typical total gate charge of 0.8nC, paired with nanosecond-scale switching delay and rise/fall times. It enables fast switching speed and low dynamic loss, supports high-frequency switching operation, and meets the fast switching requirements of small power management and load switch applications. 2.3 Low-Voltage Drive Compatibility for Multiple Control Signals With a gate threshold voltage ranging from 0.6V to 1.5V, the device can be fully turned on at a gate voltage as low as 2.5V. It is compatible with various low-voltage control levels including 1.8V, 2.5V, 3.3V and 4.5V, and can be directly driven by low-voltage master chips such as MCUs and PMICs, adapting to the low-voltage system architecture of portable devices. 2.4 Miniature SMD Package for Product Miniaturization The ultra-compact SOT-23 surface-mount package occupies minimal PCB space and supports standard automated SMT assembly with consistent soldering quality. It is suitable for high-density, compact circuit designs and matches the miniaturization requirements of portable electronic products. 2.5 Low Leakage for Reduced Standby Power Both zero-gate drain current and gate leakage current are kept at low levels, which reduces static power consumption in circuit standby mode. It is ideal for battery-powered portable devices and helps extend product battery life. 3. Main Application Fields With its advantages of low-voltage drive, low loss and small package, the FDV305N is widely used in various low-voltage low-power control scenarios: lithium battery protection boards, load switches for portable devices, USB power switches, small power management modules, wearable electronics, low-power control circuits in consumer electronics, and power switching circuits in battery-powered systems. 4. Engineering Design Guidelines Drive Matching: A 4.5V gate drive voltage is recommended for optimal conduction performance. When using gate voltages of 2.5V or lower, pay attention to the increased loss caused by higher on-resistance, and verify whether the current carrying capacity meets design requirements. Temperature Derating: Perform current derating design based on ambient temperature, heat dissipation conditions and duty cycle in practical applications. Ensure the device junction temperature does not exceed 150℃ to guarantee long-term operational reliability. PCB Layout: It is recommended to widen power trace paths appropriately to optimize the device heat dissipation path. Keep gate drive traces short to reduce the influence of parasitic parameters on switching speed. ESD Protection: MOSFETs are electrostatic sensitive devices. Standard ESD protection procedures shall be implemented during production, storage and assembly to avoid gate electrostatic breakdown. Body Diode Application: The built-in source-drain body diode can be used for low-current freewheeling scenarios. In case of large reverse current surges, verify diode parameters according to actual working conditions. 5. Product Summary The Slkor FDV305N is an N-channel trench MOSFET designed for low-voltage low-power scenarios, housed in a miniature SOT-23 package. It features 20V voltage withstand, 0.9A current carrying capability, low on-resistance, low gate charge and low-voltage drive compatibility. With balanced parameters and compact size, it is widely adaptable to applications such as battery protection, load switching and power management for portable devices, serving as a cost-effective domestic power device choice for low-power low-voltage control circuits.Slkor introductionAccording to Song Shiqiang, Slkor Semiconductor (https://www.slkormicro.com) grandly opened its third franchised store in Huaqiangbei on August 14, 2026. The store mainly offers MOSFETs, power-management ICs, Hall elements, optocouplers, IGBTs, SiC silicon-carbide components, AC/DC devices, TVS diodes, Schottky diodes, thyristors and other electronic components.FDV305N To Product Pag