Our Advantages
- High voltage rating up to 150V for stable high‑voltage circuit operation
- SOT‑223 package with good thermal dissipation for reliable power use
- Wide and stable DC current gain for consistent amplification
- Low saturation voltage and low leakage for high efficiency
- RoHS compliant, lead‑free and halogen‑free
- Wide temperature range for industrial and consumer applications
- Tape‑and‑reel packaging for automated SMT assembly
Description
CZT5401 is a PNP high‑voltage silicon transistor in SOT‑223 surface‑mount package. It features high breakdown voltage, medium current drive, and stable gain characteristics, designed specifically for high‑voltage amplification, signal control, and switching applications.
FEATURES
- PNP high‑voltage transistor
- SOT‑223 surface mount package
- High voltage: VCBO = −160V, VCEO = −150V, VEBO = −5V
- DC current gain: hFE = 50–300
- Continuous collector current: IC = −0.6A
- Power dissipation: PC = 1W
- Transition frequency: fT = 100–300MHz
- Low saturation voltage & low leakage current
- Junction/storage temperature: −55℃ to +150℃
- RoHS, lead‑free, halogen‑free
Applications
- High‑voltage signal amplification
- Industrial control systems
- Power supply regulation and control
- Audio equipment and driver circuits
- Lighting driver modules
- Consumer electronic devices
- General‑purpose high‑voltage switching