Slkor BAV70 Switching Diode: High‑Speed Low‑Capacitance SOT‑23 Silicon Epitaxial Planar Switching Diode

Slkor BAV70 is a silicon epitaxial planar switching diode in small-size SOT-23 surface-mount package with marking code A4. It features low forward voltage, fast reverse recovery time and small total capacitance. It is suitable for a wide range of ultra-high-speed switching scenarios and widely adopted in electronic designs such as signal switching and circuit protection.

1. Core Product Parameters

1. Package type: SOT-23 plastic package, marking code: A4
2. Device type: Silicon epitaxial planar switching diode
3. Reference test ambient temperature: 25℃
4. Maximum junction temperature: 150℃
5. Storage temperature range: -40℃ ~ 150℃
6. Power derating starts at ambient temperature of 25℃. Power dissipation shall be derated when ambient temperature is higher than 25℃.

2. Core Product Features

1. Compact SOT-23 package, occupying small PCB footprint for high-density surface-mount layout.
2. Low forward voltage for reduced conduction power loss.
3. Fast reverse recovery time to support ultra-high-speed switching performance.
4. Small total capacitance, minimizing signal interference under high-frequency operating conditions.
5. Silicon epitaxial planar process delivers consistent device performance.

3. Main Application Fields

1. Ultra-high-speed switching circuits for high-speed on-off switching of signal paths.
2. Signal conditioning circuits inside consumer electronic equipment.
3. Signal clamping and auxiliary ESD protection circuits for various digital circuits.
4. Circuits for high-frequency signal processing.
5. Signal switching units for compact industrial control boards.

4. Engineering Design Recommendations

1. Follow the power derating curve for power-related design. Reduce actual allowable power dissipation when ambient temperature exceeds 25℃ to prevent overheating damage.
2. For high-frequency applications, total capacitance of this diode varies with reverse voltage. Evaluate capacitance-related effects according to practical reverse operating voltage.
3. Reverse leakage current rises with increasing operating temperature. Assess leakage impact on adjacent circuits for high-temperature working conditions.
4. Perform soldering according to standard temperature specifications for SOT-23 package. Avoid long-time high-temperature soldering which may damage the die.
5. Do not operate beyond absolute maximum ratings. Exceeding rated conditions will result in permanent device damage.

5. Product Summary

BAV70 is a silicon epitaxial planar high-speed switching diode in SOT-23 package. Benefiting from compact package, low forward voltage, fast reverse recovery and small total capacitance, it meets requirements for high-speed signal switching. It is suitable for signal switching and auxiliary protection designs in consumer electronics, industrial control and many other scenarios. In practical engineering use, attention shall be paid to temperature-induced changes on power dissipation, reverse leakage current and junction capacitance. Operating conditions must be kept within absolute maximum ratings to ensure long-term stable circuit performance.

About Slkor：

SLKOR's product portfolio includes discrete semiconductor devices such as diodes, transistors, and power devices, as well as integrated circuits such as linear regulators, DC-DC converters, interface chips, Hall sensors, ADCs, and battery management systems (BMS)

BAV70To Product Page