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● High dense cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum
● DC current capability
P-Channel Enhancement Mode Field Effect Transistor
| V(BR)DSS | RDS(on)MAX | ID |
| -30V | 60mΩ@-10V | -4.2A |
| 70mΩ@-4.5V | ||
| 85mΩ@-2.5V |
FEATURE
● High dense cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum
● DC current capability
APPLICATION
● Load Switch for Portable Devices
● DC/DC Converter
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.















