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FDV301N N-Channel Power MOSFET SOT-23
● Very low level gate drive requirements allowing direct operation in 3V circuits. Vas(h) < 1.5V.
● Gate-Source Zener for ESD ruggedness >6ky Human Body Model
● Replace multiple NPN digital transistors with one DMOSFET.
Features
l0.22 A, 25 V. RDS(ON) =4 Ω @ VGS = 4.5 V
RDS(ON) = 5Ω @ VGS = 2.7 V.
lVery low level gate drive requirements allowing direct operation in 3V circuits. Vas(h) < 1.5V.
lGate-Source Zener for ESD ruggedness >6ky Human Body Model
lReplace multiple NPN digital transistors with one DMOSFET.
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
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ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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