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ES1JF Fast Recovery Rectifier Diode SMAF
This ES1JF fast recovery diode is engineered to deliver stable performance with a forward voltage drop (VF) of 1.68 A@1A. Its ultra-fast reverse recovery time (trr) of just 35 ns enables highly-efficient high-speed switching performance. The diode features low reverse leakage current (IR) of 5 μA at 25℃, improving reliability and power-use efficiency across various circuits. It has a typical junction capacitance (Cj) of 15 pF and supports operating and storage temperature ranging from -55℃ to +150℃.
OUR ADVANTAGE
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
DESCRIPTION
This ES1JF fast recovery diode is engineered to deliver stable performance with a forward voltage drop (VF) of 1.68 A@1A. Its ultra-fast reverse recovery time (trr) of just 35 ns enables highly-efficient high-speed switching performance. The diode features low reverse leakage current (IR) of 5 μA at 25℃, improving reliability and power-use efficiency across various circuits. It has a typical junction capacitance (Cj) of 15 pF and supports operating and storage temperature ranging from -55℃ to +150℃.
FEATURES
● For surface mounted applications
● Low-profile SMD package
● Glass Passivated Chip Junction
● Easy to pick and place for SMT assembly
● Ultra-fast reverse-recovery, high-efficiency performance
● Low typical junction capacitance: 15 pF (R=4V, f=1MHz)
● Lead free in comply with EU RoHS 2011/65/EU directives
APPLICATIONS
● Power Supply Systems: Ideal for use in high-voltage power supplies and rectifier circuits.
● Switching Circuits: Suitable for high-speed switching applications where ultra-fast recovery is crucial.
● Signal Protection: Effective in protecting sensitive electronic components from reverse voltage spikes.
● Communication Equipment: Perfect for use in RF and communication systems that require quick response and reliable performance.
● Industrial Control: Used for high-frequency rectification and freewheeling in industrial power conversion circuits.
Name
Title
Description
Datasheet
Support
ES1DF Fast Recovery Rectifier Diode SMAF
Brand: slkor， VRRM(V)： 200V IO(A)： 1A VF(V)： 1V IR(A)： 5μA trr(ns)： 35ns Package： SMAF
ES1GF Fast Recovery Rectifier Diode SMAF
Brand: slkor， VRRM(V)： 400V IO(A)： 1A VF(V)： 1.25V IR(A)： 5μA trr(ns)： 35ns Package： SMAF
ES2G Fast Recovery Rectifier Diode SMA
Brand: slkor， VRRM(V)： null IO(A)： null VF(V)： 1.25V IR(A)： 5uA trr(ns)： 35ns Package： SMA
ES2G Fast Recovery Rectifier Diode SMC
Brand: slkor， VRRM(V)： 400V IO(A)： 2A VF(V)： 1.25V IR(A)： 5uA trr(ns)： 35ns Package： SMA
ES2GF Fast Recovery Rectifier Diode SMAF
Brand: slkor， VRRM(V)： 400V IO(A)： 1A VF(V)： 1.25V IR(A)： 5μA trr(ns)： 35ns Package： SMAF
ES2JF Fast Recovery Rectifier Diode SMAF
Brand: slkor， VRRM(V)： 600V IO(A)： 1A VF(V)： 1.68V IR(A)： 5μA trr(ns)： 35ns Package： SMAF
ES2JW Fast Recovery Rectifier Diode SOD-123FL
Brand: slkor， VRRM(V)： 600V IO(A)： 2A VF(V)： 1.7V IR(A)： 5μA trr(ns)： 35ns Package： SOD-123FL
ES2M Fast Recovery Rectifier Diode SMA
Brand: slkor， VRRM(V)： 1000V IO(A)： 2A VF(V)： 1.7V IR(A)： 5μA trr(ns)： 75ns Package： SMA
ES3DC Fast Recovery Rectifier Diode SMC
Brand: slkor， VRRM(V)： 200V IO(A)： 3A VF(V)： 1.25V IR(A)： 5μA trr(ns)： 35ns Package： SMC
F1D Ultra Fast Recovery Diode SOD-123FL
Brand: slkor， VRRM(V)： 200V IO(A)： 1A VF(V)： 1.3V IR(A)： 5.0mA trr(ns)： 150ns Package： SOD-123FL
ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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