Slkormicro SL2312 N‑Channel Power MOSFET: 20V 5A SOT‑23 Power Switch FET

SL2312 is an N-Channel power MOSFET released by Slkormicro. It adopts SOT-23 surface-mount package with 20V drain-source withstand voltage and 5A continuous drain current. This device features low on-state resistance and favorable switching speed. It is widely used in battery protection, load switch and power-management circuits, and serves as a common power component for compact power-switching applications.

1. Core Product Parameters

Absolute Maximum Ratings (at ambient temperature of 25 ℃)

1. Drain-source voltage: 20V
2. Gate-source voltage: 8V
3. Continuous drain current: 5A
4. Pulsed drain current: 18A
5. Total device power dissipation: 1250mW
6. Maximum junction operating temperature: 150 ℃
7. Storage temperature range: -55 ℃ to 150 ℃

Electrical Characteristics (at ambient temperature of 25 ℃)

1. Minimum drain-source breakdown voltage: 20V
2. Gate threshold voltage range: 0.45V-1.2V
3. Maximum body diode forward voltage drop: 1.5V
4. Maximum zero-gate-voltage drain current is 1uA at room temperature and 10uA under 55 ℃
5. Maximum gate-body leakage current: 100nA
6. Maximum on-state resistance is 25mΩ under 4.5V gate-source voltage and 5A operating current
7. Maximum on-state resistance is 35mΩ under 2.5V gate-source voltage and 2A operating current
8. Maximum on-state resistance is 50mΩ under 1.8V gate-source voltage and 1A operating current
9. Typical input capacitance: 650pF; Typical output capacitance: 120pF
10. Typical turn-on time: 20ns; Typical turn-off time: 60ns

Package Dimensions

The device comes in SOT-23 surface-mount package. The package body length ranges from 2.800 mm to 3.000 mm. The body width ranges from 1.200 mm to 1.400 mm. The overall device height ranges from 0.900 mm to 1.150 mm.

2. Key Product Features

1. High current-handling capacity. It supports 5A continuous operating current and maximum 18A short-time pulsed current.
2. Excellent performance of on-state resistance under different gate drive voltages. It maintains low on-state resistance even with 2.5V low gate drive voltage, which is compatible with low-voltage drive circuits.
3. SOT-23 surface-mount package reduces PCB footprint and fits miniaturized electronic products.
4. Lead-free construction meets lead-free manufacturing requirements.
5. Short turn-on and turn-off time delivers fast switching performance for switching circuits.

3. Main Application Fields

1. Battery protection circuits for over-current protection and discharge path control of lithium-ion batteries and other energy-storage devices.
2. Load switches for on-off control of loops in various electronic equipment.
3. Power-management related circuits in consumer electronics and compact devices.

4. Engineering Design Recommendations

1. Sufficient voltage margin shall be reserved in practical circuits. Long-term operation close to the absolute maximum 20V withstand voltage shall be avoided to prevent device breakdown.
2. Gate-source voltage must not exceed 8V. Excessive gate voltage will permanently damage gate dielectric layer and cause device failure.
3. Device power dissipation is affected by ambient temperature. Derating of allowable continuous power is required when ambient temperature rises, to keep junction temperature below 150 ℃.
4. This device integrates body diode. Pay attention to heat generation caused by forward voltage drop when reverse current flows through the body diode.
5. In switching circuit design, switching loss brought by input and output capacitance shall be considered. Reasonable gate drive resistance shall be selected to balance switching noise and switching speed.
6. The 18A pulsed drain current applies only to short-time pulse conditions instead of continuous operation. Pulse width and duty cycle constraints from datasheet must be followed.

5. Product Summary

SL2312 is an N-Channel power MOSFET in SOT-23 package, rated for 20V withstand voltage and 5A continuous drain current. It achieves good on-state resistance performance under low-voltage gate drive with compact package size. Its overall parameters suit medium-and-low power switching scenarios including battery protection, load switches and power management. It is suitable for power-loop design of space-constrained consumer electronic products. Derating design complying with absolute maximum ratings is required for long-term stable circuit operation.

About Slkor：

Slkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Most of the wafer manufacturing and packaging and testing are carried out within China. The company employs and collaborates with individuals and organizations worldwide, with a laboratory for product performance and reliability testing and a central warehouse located at its headquarters in Shenzhen. Slkor has filed for over a hundred invention patents, offers more than 2,000 product models, and serves over ten thousand customers globally. Its products are exported to countries and regions including Europe, the Americas, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years. With well-established management systems and streamlined workflows, Slkor has rapidly enhanced the brand awareness and reputation of its "SLKOR" brand through its outstanding quality and standardized services. Its product range includes three major series: diodes, transistors, and power devices, with recent introductions of new products such as Hall elements and analog devices, expanding its presence in sensors, Risc-v microcontrollers, and other product categories.

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