What is IGBT

The so-called IGBT (Insulated Gate Bipolar Transistor) is a composite fully controlled-voltage-driven power semiconductor device composed of BJT (Bipolar Junction Transistor) and MOS (Insulated Gate Field Effect Transistor). It has the characteristics of self-turnoff.

To put it simply, it is a switch that is either on or off. The IGBT does not have the function of amplifying voltage. When it is on, it can be regarded as a wire, and when it is off, it is regarded as an open circuit. IGBT combines the advantages of both BJT and MOSFET devices, such as low driving power and saturation voltage drop.

Currently, Silan Micro's 5-inch and 6-inch chip production lines are running stably, and the 8-inch chip production line has also been successfully put into production. It has successively completed the research and development of high-voltage BCD, ultra-thin trench gate IGBT, super-junction high-voltage MOSFET, high-density trench gate MOSFET, fast recovery diode, MEMS sensor and other processes.  
Hua Microelectronics
Official website: http://www.hwdz.com.cn/
Jilin Hua Microelectronics Co., Ltd. was established in 1999. It integrates power semiconductor device design and development, chip processing, packaging testing and product marketing. The official website information shows that it has multiple power semiconductor discrete devices and IC chip production lines of 4 inches, 5 inches and 6 inches. The chip processing capacity is 4 million pieces per year, the packaging resources are 2.4 billion pieces/year, and the modules are 3.6 million pieces/year. In April this year, China Microelectronics planned to raise funds for an 8-inch production line project. IGBT chips with various voltages and current levels of 600V-1700V are one of the focuses of the project.  
China Resources Micro
Official website: https://www.crmicro.com/
China Resources Microelectronics, formerly known as AVIC (Chongqing) Microelectronics Co., Ltd., integrates semiconductor design, R&D, manufacturing and services. It takes power semiconductor devices and power/analog integrated circuits as its industrial base and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors and other technologies.  
China Resources Micro has the first domestically owned 8-inch wafer production line dedicated to power devices, with a monthly production capacity of 51,000 wafers, a process capability of 0.18 micron, and an 8-inch special process production line. At present, the company has launched the construction planning of 12-inch wafer production line and related supporting packaging and testing lines, mainly producing power semiconductor products such as MOSFET, IGBT, and power management chips.  
Yangjie Technology
Official website: http://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established in August 2006. It is committed to the industrial development of power semiconductor chip and device manufacturing, integrated circuit packaging and testing and other fields. Its main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc.  
It is understood that in terms of IGBT, Yangjie Technology took control of a 6-inch wafer line located in Yixing in March 2018. Currently, this production line has mass-produced IGBT chips, which are mainly used in small household appliances such as induction cookers. Yangjie Technology stated on the interactive platform that in 2018, the company actually produced nearly 6,000 IGBT chips.  
       

module

IGBT module is a modular semiconductor product that is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in inverters, UPS uninterruptible power supplies and other equipment Above; IGBT modules have the characteristics of energy saving, easy installation and maintenance, and stable heat dissipation. Currently, most of the modular products sold on the market are such modular products. Generally speaking, IGBT also refers to IGBT modules. With the advancement of concepts such as energy conservation and environmental protection, such products will become more and more common in the market.

Shanghai Luxin Electronic Technology

Focus on the design and application of power semiconductors (IGBT, SJMOS & SiC), including chips, single transistors and modules. It has the following advantages: by optimizing the withstand voltage terminal ring, it achieves IGBT high blocking voltage, effectively reduces the chip area, and reaches industrial and automotive grade reliability standards; by controlling the minority carrier lifetime, it optimizes the saturation voltage drop and switching speed; it realizes safe operating area (SOA) and short circuit SCSOA has the best performance in the current safe operating area; improves the reliability of IGBT active area cell design and suppresses the latch-up effect of IGBT; adjusts backside thinning, implantation, annealing, back gold and other processes; and achieves large-scale mass production of 60um~180um wafer thickness.

Jiangsu Donghai Semiconductor

Jiangsu Donghai Semiconductor Technology Co., Ltd. was established in December 2004 with a registered capital of 53.3 million yuan and 325 employees. It is a high-tech enterprise that designs, develops, packages and tests semiconductor power devices. Our company has invested a total of 280 million yuan, and the chip manufacturing factory that cooperates with our company has invested 60 billion yuan. Our company has passed the IS O90001 quality system certification, ISO140001 environmental management system certification and TS16949 quality management system certification, and has successively obtained Wuxi High-tech Enterprise Certification and National High-tech Enterprise Certification. Its products have won the famous trademarks of Wuxi City and Jiangsu Province. It is an enterprise recognized by the State Administration for Industry and Commerce as a contract-abiding and trustworthy enterprise. Jiangsu Donghai Semiconductor Technology integrates a number of utility patents and invention patents. It has applied for nearly a hundred invention and utility model patents in total, and has been authorized to establish the Jiangsu Provincial Engineering Technology Research Center with the approval of the Jiangsu Provincial Science and Technology Department. It is one of the most competitive semiconductor packaging and testing companies in China.

Jiangsu Donghai Semiconductor Technology Co., Ltd. has always been committed to improving product quality and maintaining consistency with international advanced levels in terms of packaging, testing equipment, packaging technology, and material selection. The company is equipped with ASM automatic crystal bonding machine, ASM automatic wire bonding machine, automatic rib cutting equipment, automatic testing and sorting machine and other equipment. The company continues to increase investment in research and development of integrated circuits and power device packaging, and always implements a strict quality control system during the production and processing process. Since the company's establishment, its products have met ROHS and Halogen Free environmental certifications according to different customer requirements. The company mainly packages TO251, TO252, TO263, TO220, TO220F, TO3P, TO247, SOT and QFN series. Product series: MOSFET, Schottky diode, fast recovery diode, thyristor, three-terminal voltage regulator, IGBT.

Shenzhen Xinneng Semiconductor Technology Co., Ltd. was established in 2013. It is jointly invested by well-known institutions such as Shenzhen Zhengxuan Technology, Shenzhen State-owned Assets Supervision and Administration Commission, Shenzhen Talent Innovation Fund, Dachen Venture Capital, Fangguang Capital, Xiamen Falcon and other well-known institutions. It is committed to the research and development, application and sales of IGBT chips, IGBT driver chips and high-power intelligent power modules.  
Currently, Xinneng focuses on 600V and 1200V small and medium power IGBT products. It has complete product series in four fields: IGBT single tube, IPM, IGBT module and HVIC, and its product performance is domestically leading.  
Jiaxing Star
Official website: http://www.powersemi.cc/
Jiaxing Star Semiconductor Co., Ltd. was established in April 2005. It is a national high-tech enterprise specializing in the R&D, production and sales of power semiconductor components, especially IGBT modules. Its main products are power semiconductor components, including IGBT, MOSFET, IPM, FRD, SiC, etc. It has successfully developed nearly 600 types of IGBT module products, with voltage levels ranging from 100V to 3300V and current levels ranging from 10A to 3600A.  
In terms of technology, Jiaxing Star has developed a full range of planar gate NPT type 1200V IGBT chips and a full range of trench gate field-interrupted 650V, 750V, 1200V and 1700V IGBT chips. It has solved key process technologies including 8-inch wafer thinning technology, backside high-energy ion implantation technology, backside laser annealing activation technology and trench gate trenching forming technology.  
Macro Micro Technology
Official website: http://www.macmicst.com/
Hongwei Technology Co., Ltd. was established in August 2006 and is based in the power electronic components industry. Its business scope includes the design, research and development, production and sales of new power semiconductor chips, discrete devices and modules, such as FRED, VDMOS, IGBT chips, discrete devices, standard modules and user-customized modules (CSPM). It also provides modular design, manufacturing and system solutions for efficient and energy-saving power electronic devices.  
In 2018, Acer Technology and BAIC New Energy established the Acer-BAIC New Energy IGBT Joint Laboratory, planning to jointly build a motor controller industry chain from chip design to module design and packaging to motor controller design and production. Acer Micro Technology’s annual report shows that in 2018, its IGBT modules for electric vehicles gradually increased in volume in SVG industry applications, and customer-customized products also began to be sold in batches.

IGBT technology development history

Official website: http://www.ncepower.com/
Wuxi New Clean Energy Co., Ltd. was established in 2013. Its main business is the R&D, design and sales of semiconductor power devices such as MOSFET and IGBT. The main products can be divided into chips and packaged products according to whether they are packaged or not. They are widely used in consumer electronics, automotive electronics, industrial electronics, new energy vehicles/charging piles, intelligent equipment manufacturing, Internet of Things, photovoltaic new energy and other fields.  
 At present, Wuxi New Clean Energy's main products include 12V~200V trench power MOSFET (N channel and P channel), 30V~300V shielded gate power MOSFET (N channel and P channel), 500V~900V super junction power MOSFET, and 600V~1350V trench gate field stop IGBT. The relevant core technology has obtained multiple patent authorizations, and the four major series of products have been certified as high-tech products in Jiangsu Province.  
 

Daxin Semiconductor official website: http://www.daxin-semi.com/ Ningbo Daxin Semiconductor Co., Ltd. was established in 2013. It is a Sino-foreign joint venture high-tech company founded by returned doctors. It is mainly engaged in the design, manufacturing and sales of power semiconductor chips and devices such as IGBT, MOSFET and FRD. It has the design and process integration technology of power semiconductor chips such as IGBT, MOSFET and FRD. It has built an IGBT product performance testing, application and reliability laboratory, and has an IGBT module R&D production line with complete testing and manufacturing means.

Advanced Semiconductor Official website: http://www.asmcs.com/ Shanghai Advanced Semiconductor Manufacturing Co., Ltd., formerly Shanghai Philips Semiconductor Company established in 1988 by a Sino-Dutch joint venture, has 5-inch, 6-inch, and 8-inch wafer production lines. It focuses on the manufacturing of analog circuits and power devices. It has provided IGBT domestic and foreign foundry services since 2004. Shanghai Advanced established an IGBT backside process line in China in 2008. It has complete IGBT process capabilities such as IGBT front, back and testing. The voltage range of IGBT/FRD covers 650V, 1200V, 1700V, 3300V, 4500V, 6500V. Its technical capabilities include PT, NPT, Field Stop, as well as planar and trench IGBT, etc. Its 6-inch wafer fab focuses on planar IGBT and FRD process platforms, with voltages covering 1200V~6500V, and its 8-inch wafer fab focuses on Trench Field Stop IGBT process platforms, with voltages covering 450V~1700V.

China Resources CSMC official website: http://www.csmc.com.cn/ Wuxi China Resources CSMC Technology Co., Ltd. is affiliated to China Resources Microelectronics Co., Ltd., a subsidiary of China Resources Group that is responsible for the semiconductor business. CSMC provides customers with a wide range of wafer manufacturing technologies, including BCD, Mixed-Signal, HV CMOS, RFCMOS, Embedded-NVM, BiCMOS, Logic, MOSFET, IGBT, SOI, MEMS, Bipolar and other standard processes and a series of customized process platforms.  
CSMC has the largest 6-inch foundry line and an 8-inch foundry line in China. The monthly 6-inch production capacity exceeds 110,000 pieces. The current monthly production capacity of the 8-inch production line has reached 35,000 pieces. In the future, the overall monthly production capacity is planned to be 60,000 pieces, and the process technology will be upgraded to 0.11 micron. In terms of IGBT, CSMC announced in 2012 that it has completed the development of 600V and 1700V Planar NPT IGBT and 600V Trench PT IGBT process platforms.  
  Main companies and main products in the domestic IGBT industry chain
 

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