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2SB1197KR PNP Bipolar Transistor
2SB1197KR PNP Bipolar Transistor
Product Overview
The 2SB1197KR is a PNP bipolar transistor manufactured by Slkor, suitable for a variety of low-power applications. It features moderate collector-emitter breakdown voltage, low power consumption and high DC current gain. Housed in the SOT-23 package, it is designed for surface-mount applications.
Key Characteristics
Transistor Type: PNP – PNP-type bipolar junction transistor design. Collector-Emitter Breakdown Voltage (Vceo): 32V – Delivers moderate collector-emitter breakdown voltage. Collector Current (Ic): 800mA – Offers moderate power-handling capability. Power Dissipation (PT): 200mW – Optimized for low-power applications. Collector Cut-off Current (Icbo): 0.5μA – Features low cut-off current. Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 0.4V @ 500mA, 50mA – Low saturation-voltage design. DC Current Gain (hFE@Ic,Vce): 390 @ 100mA, 3V – Provides high DC current gain. Transition Frequency (fT): 150MHz – Suitable for general low-frequency applications. Operating Temperature: -55℃ ~ +150℃ – Adaptable to a wide temperature range. Package: SOT-23 – For surface-mount applications.
Application Fields
- Low-power electronic devices - Amplifiers and amplifying circuits - Laser drivers - LED drivers - Automotive electronics
Performance Advantages
- Moderate breakdown voltage: The 32V breakdown voltage supports medium-and-low-voltage applications. - Moderate power-handling capability: 800mA collector current fits low-power application scenarios. - Low power consumption: 200mW power dissipation for low-power applications. - Low cut-off current: 0.5μA cut-off current helps reduce power consumption. - Low saturation-voltage design: 0.4V saturation voltage contributes to lower power loss. - High DC current gain: DC current gain of 390, well-suited for amplifier circuits.
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ShenzhenSLKORMicroSemiconCo., Ltd.
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