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NPN Silicon Epitaxial Planar Digital Transistor
The DTC114EE is an NPN digital transistor manufactured by Slkor. It is suitable for a wide range of application scenarios. This transistor features high collector-emitter breakdown voltage, moderate collector current and low power consumption. Housed in a surface-mount package, it can be used in various electronic devices.
Transistor Type: NPN – NPN-type bipolar junction transistor design. Collector-Emitter Breakdown Voltage (Vceo): 50V – Delivers high collector-emitter breakdown voltage. Collector Current (Ic): 100mA – Offers moderate collector-current capability. Power Dissipation (Pd): 150mW – Optimized for low-power electronic devices. Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 0.3V @ 10mA, 0.5mA – Low saturation-voltage design. Transition Frequency (fT): 250MHz – Suitable for high-frequency applications.
Digital logic circuits Amplifiers and amplifying circuits Power management systems Communication equipment LED drivers
High breakdown voltage: The 50V breakdown voltage supports medium-to-high-voltage applications. Moderate collector-current capability: 100 mA collector current fits diverse application scenarios. Low power consumption: 150 mW power dissipation for low-power electronic equipment. Low saturation-voltage design: 0.3 V saturation voltage helps reduce power consumption. High transition frequency: The 250 MHz transition frequency enables high-frequency applications.
The DTC114EE comes in a surface-mount package. Refer to the product datasheet for detailed mounting and operating instructions to ensure optimal performance and stability.
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