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BC860B PNP Bipolar Transistor SOT-23

BC860B is a PNP silicon epitaxial transistor in SOT-23 surface‑mount package. It is designed for switching and amplifier applications, offering stable gain, low noise, and consistent electrical performance. The B‑grade provides hFE from 220 to 450 for balanced amplification and switching control.

Our Advantages


  • Standard SOT-23 package supports fully automated assembly
  • High and stable DC current gain for reliable signal amplification
  • Low saturation voltage and low leakage for high efficiency
  • Wide voltage selection for flexible circuit design
  • Ultra-compact size ideal for high-density PCB layouts
  • Wide operating temperature range for industrial applications
  • RoHS compliant for global mass production

Description


BC860B is a PNP silicon epitaxial transistor in SOT-23 surface‑mount package. It is designed for switching and amplifier applications, offering stable gain, low noise, and consistent electrical performance. The B‑grade provides hFE from 220 to 450 for balanced amplification and switching control.

FEATURES


  • PNP silicon epitaxial transistor
  • SOT-23 miniature surface mount package
  • For switching and amplifier applications
  • VCBO = −50V, VCEO = −45V, VEBO = −5V
  • DC current gain (hFE): 220–450 (B rank)
  • Continuous collector current: IC = −100mA
  • Peak collector current: ICM = −200mA
  • Power dissipation: Ptot = 200mW
  • Transition frequency: fT = 100MHz (typ.)
  • Low noise figure: NF = 4dB
  • Junction/storage temperature: −65℃ to +150℃
  • Marking: 4F

Applications


  • General‑purpose signal amplification
  • Low‑power switching circuits
  • Audio frequency amplifier modules
  • Portable consumer electronics
  • Battery‑powered devices
  • Industrial control and sensor interfaces
  • High‑density SMT circuit designs
Name
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Description
BC860B SOT-23.pdf
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Datasheet
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