Snelle hersteldiodeDe interne structuur van een snelle hersteldiode verschilt van die van een gewone PN-overgangsdiode; deze behoort tot een PIN-overgangsdiode, dat wil zeggen dat in het midden van het P-type siliciummateriaal en het N-type siliciummateriaal een basisgebied I wordt toegevoegd, waardoor een PIN-siliciumschijf ontstaat. Omdat het basisgebied zeer dun is, is de reverse recovery-lading zeer klein, waardoor de reverse recovery-tijd van de snelle hersteldiode korter is, de doorlaatspanning lager is en de reverse doorslagspanning (spanningsvastheidswaarde) hoger is.
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