Diodo de Recuperação RápidaA estrutura interna do diodo de recuperação rápida é diferente do diodo de junção PN comum, pertencendo ao diodo de junção PIN, ou seja, a região de base I é adicionada no meio do material de silício tipo P e do material de silício tipo N para formar a pastilha de silício PIN. Como a região de base é muito fina, a carga de recuperação reversa é muito pequena, portanto, o tempo de recuperação reversa do diodo de recuperação rápida é mais curto, a queda de tensão direta é menor e a tensão de ruptura reversa (valor de tensão suportável) é maior.
The purpose of these cookies is to provide the requested service, application, or resource. Without these cookies, none of your requests can be completed correctly. Typically, they are used to manage actions you perform on our website, for example, they help you obtain visual elements, use page resources, log into your account. Besides setting basic functions, using these cookies, we can also ensure the security and efficiency of our website.
Analytics Cookies
The purpose of these cookies is to provide quantitative data about user interaction with our website. Additionally, these cookies collect information used to track website performance. Typically, they do not collect sensitive information and only provide us with general statistics, such as visitor numbers for different pages, traffic sources, and conversion rates, to help us improve website performance. By disabling these cookies, we will be unable to identify you as a visitor.
Advertising Cookies
These cookies are set by our advertising partners to provide behavioral advertising and retargeting analysis. They collect browsing information to build user profiles and run personalized ads. When you visit other websites, you will see customized ads based on a profile created according to your interests and behavior.