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SL2319A P-Channel Enhancement MOSFET SOT-23
● Trench Power LV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Product Overview
The SL2319A is a P-channel low-voltage MOSFET. It features a drain-source voltage of 40 V, continuous drain current of 4.4 A and power dissipation of 1.5 W, making it suitable for low-voltage switching applications. Its on-state resistance is 90 mΩ @ 10 V, 2 A, and the gate threshold voltage is 2.5 V @ 250 µA. Housed in the SOT-23 package, this MOSFET has a compact footprint and is ideal for compact PCB designs.
Product Specifications
- Type: P-Channel - Drain-Source Voltage (Vdss): 40 V - Continuous Drain Current (Id): 4.4 A - Power Dissipation (Pd): 1.5 W - On-state Resistance (RDS(on) @ Vgs, Id): 90 mΩ @ 10 V, 2 A - Gate Threshold Voltage (Vgs(th) @ Id): 2.5 V @ 250 µA - Package: SOT-23
Applications
- Power Management
- Battery Protection
- Low-Voltage Switching
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Longevity
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ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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