Semiconductor technology is developing rapidly. Silicon carbide SiC, gallium nitride GaN, gallium arsenide GaAs, etc. are representatives of the third generation of semiconductors. Silicon carbide, in particular, will have a market share of 10-20 billion in the power electronics market every year.

Compared with traditional silicon Si materials, silicon carbide SiC components have the characteristics of wide band gap, high switching frequency, high surge resistance, high voltage resistance and high temperature resistance, long life, high power density, and a wide range of applications.

At present, the two companies with the best application technology of silicon carbide SiC components in the world are CREE and ROHM. Companies such as ST are also rapidly deploying, and South Korea's SLKOR technology is also at the forefront. In terms of materials and components, there is a gap of 5-10 years between China and abroad, which is limited by silicon carbide SiC substrates, epitaxial wafers, component processing (wafer cutting, high-pressure energy injection, high-temperature annealing and other key processes and equipment, etc.).

Shenzhen SLKOR Micro Semiconductor Co., Ltd. (www.slkormicro.com), the 55th and 13th Institute of China Electric Power, BYD Division 6, Tsinghua University Electric Power Research Institute, etc., are jointly researching the application of related technologies. Currently, SiC Schottky, high-voltage MOS tubes, SiC modules, TVS/ESD and other products are available. We are currently using South Korea's SLKOR products to strongly expand into the Chinese market. We have made a very good start and will replace our domestic substitutes after they are completed.

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QQ: 3518641314 Manager Li

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