With the development of gallium nitride fast charging, high-power multi-port fast charging has begun to become popular. 100W and 120W fast charging have been launched one after another to meet consumers' multi-port high-power charging needs and fill the market gap. High-power fast charging requires a PFC circuit to perform power factor correction and suppress interference to the power grid.

Active PFC circuits are usually used in chargers to achieve power factor correction through inductor Boost circuit boost and diode rectification. In order to achieve high power output in a small size, the PFC circuit also uses gallium nitride switching tubes to increase the operating frequency and reduce the size of the magnetic components.

Fast recovery diodes have a long reverse recovery time and large switching losses, making them unable to meet small-volume high-frequency applications. Silicon carbide diodes have no reverse recovery current and are very suitable for rectification applications at high frequencies. Together with the widely used gallium nitride switch tubes, the powerful combination can increase the frequency and reduce losses, thereby reducing the size of the magnetic components and increasing the power density of the charger.

Mepsen has launched three silicon carbide diodes in different packages for PFC rectification applications in high-power multi-port fast charging chargers based on gallium nitride. It is worth mentioning that Mipsen silicon carbide diodes have been widely used in high-power fast charging, such as MOMAX and REMAX brands.

An intuitive comparison of the package sizes of Mipsen's three silicon carbide diodes shows that TO252 occupies the largest board area, followed by DFN8*8 and DFN5*6, which is the smallest.

The first is the popular MSM06065G1 silicon carbide diode in DFN5*6 package.

MSM06065G1 silicon carbide diode adopts DFN5*6 package. The ultra-thin package saves volume and is suitable for high-power gallium nitride adapters with ultra-high power density.

MSM06065G1 silicon carbide diode has a withstand voltage of 650V, a continuous forward current of 6A at 150℃, an operating temperature range of -55 to 175℃, a forward voltage drop of 1.3V, and has a positive temperature coefficient characteristic and can be used directly in parallel. Can be used in switching power supplies, power factor correction, motor drives and xenon lighting applications.

The next one is the MSL06065G1 silicon carbide diode in DFN8*8 package.

The MSL06065G1 silicon carbide diode is packaged in DFN8*8. The ultra-thin package saves volume. The large-area heat dissipation pad can enhance heat dissipation capabilities. It is suitable for high-power gallium nitride adapters that do not pursue the ultimate in power density.

MSL06065G1 silicon carbide diode has a withstand voltage of 650V, a continuous forward current of 6A at 150℃, an operating temperature range of -55 to 175℃, a forward voltage drop of 1.4V, and has a positive temperature coefficient characteristic and can be used directly in parallel. Can be used in switching power supplies, power factor correction, motor drives and xenon lighting applications.

Finally, there is the MSD04065G1 silicon carbide diode in a TO-252 package.

MSD04065G1 silicon carbide diode is packaged in TO-252, which has a higher package and is suitable for use in power supplies with low power density requirements.

MSD04065G1 silicon carbide diode has a withstand voltage of 650V, a continuous forward current of 4.8A at 150℃, an operating temperature range of -55 to 175℃, a forward voltage drop of 1.45V, and has a positive temperature coefficient characteristic and can be used directly in parallel. Can be used in switching power supplies, power factor correction, motor drives and xenon lighting applications.

Summary of charging head network

Silicon carbide diodes have a higher overvoltage safety margin, which can improve efficiency under full power conditions. Compared with silicon diodes, silicon carbide diodes improve efficiency and reduce heat dissipation requirements. Parallel devices will not cause thermal runaway and have almost no switching losses. These advantages have made silicon carbide diodes widely used and gradually replaced traditional fast recovery diodes.

There is no doubt that the performance of third-generation semiconductors greatly exceeds conventional silicon devices in terms of power density and switching frequency. The application of Mipurson's silicon carbide diodes in chargers can increase the operating frequency of the charger, reduce the size, improve efficiency and power density, and enhance the competitiveness of charger products. Moreover, the high heat resistance and high reliability of silicon carbide devices also improve the reliability of the charger.

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