In order to make the transition to highly energy-efficient wide-bandgap semiconductor technology more convenient, STMicroelectronics has released two integrated power system packages, masterGaN3* and masterGaN5, for power conversion applications up to 45W and 150W respectively.

Together with masterGaN1, masterGaN2 and masterGaN4 for 65W to 400W applications, these two new products provide engineers designing switching power supplies, chargers, adapters, high voltage power factor correction (PFC) and DC/DC converters with more flexibility in selecting the right gallium nitride (GaN) device and driver solution.
 

STMicroelectronics’ masterGaN concept simplifies the development process of GaN wide bandgap power technology to replace ordinary silicon-based MOSFETs. The new product integrates two 650V power transistors with optimized high-voltage gate drivers and associated safety protection circuitry, eliminating gate driver and circuit layout design challenges. Because GaN transistors can achieve higher switching frequencies, the new integrated power system package can enable power supplies that are 80% smaller than silicon-based designs and are highly robust and reliable.

The on-resistance values ​​(Rds(on)) of masterGaN3’s two GaN power transistors are unequal, 225mΩ and 450mΩ respectively, making it suitable for soft switching and active rectification converters. In masterGaN5, the on-resistance value (Rds(on)) of both transistors is 450mΩ, which is suitable for topologies such as LLC resonance and active clamp flyback converter.

Like other members of the masterGaN product family, both devices have inputs compatible with 3.3V to 15V logic signals, simplifying the connection of the product itself to host controllers such as DSP processors, FPGAs or microcontrollers, and external devices such as Hall sensors. The new products also integrate safety protection features, including high- and low-side undervoltage lockout (UVLO), gate driver interlock, over-temperature protection and shutdown pins.

Each masterGaN product comes with a dedicated prototype development board to help designers quickly start new power supply projects.

Both the EVALmasterGAN3 and EVALmasterGAN5 development boards contain a single-ended or complementary drive signal generator circuit. An adjustable dead-time generator is onboard, along with associated device interfaces, allowing the user to use different input signals or PWM signals, connect an external bootstrap diode to improve capacitive loading, and insert a low-side current-sense resistor for peak current topologies.

masterGaN3 and masterGaN5 are now in mass production, using a 9mm x 9mm GQFN package optimized for high-voltage applications, with a creepage distance of 2mm between high-voltage and low-voltage pads.

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