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SL10N10A N-Channel Power MOSFET SOT-223
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(on)
Product Overview
The SL10N10A is a medium-voltage N-channel MOSFET with a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 10 A. Its on-state resistance (RDS(on) @ Vgs, Id) is 95 mΩ @ 10 V, 10 A, and the gate threshold voltage (Vgs(th) @ Id) is 3 V @ 250 µA. Featuring excellent switching characteristics and thermal stability, this device is suitable for high-frequency, high-efficiency and high-reliability applications such as switching power supplies and inverters.
Product Features
- Low on-state resistance - High switching speed - High voltage withstand capability
- Low threshold voltage
- Good thermal stability - Package: SOT-223, easy for soldering and assembly
Typical Applications
- Switching Power Supplies
- Inverters
- Motor Drivers
- Lighting Control
Product Specifications
- Type: N-Channel - Drain-Source Voltage (Vdss): 100 V
- Continuous Drain Current (Id): 10 A - Power Dissipation (Pd): 1.25 W
- On-state Resistance (RDS(on) @ Vgs, Id): 95 mΩ @ 10 V, 10 A - Gate Threshold Voltage (Vgs(th) @ Id): 3 V @ 250 µA
- Operating Junction Temperature (Tj): -55 ℃ ~ +150 ℃
- Package: SOT-223
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
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ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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