Service Hotline
● Trench Power LV MOSFET technology
● High Density Cell Design for Low RosoN
● High Speed switching
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS -12V
● lD -6A
● RDSON(at VGS=-4.5V) <40 mohm
● RDSON(at VGS=-2.5V) <50 mohm
● RDSON(at VGS=-1.8V) <70 mohm
General Description
● Trench Power LV MOSFET technology
● High Density Cell Design for Low RosoN
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.















