Starting in 2018, a number of fast-charging chargers developed based on gallium nitride technology have been put into mass production, and gallium nitride has also officially begun commercial use in the consumer power supply field.

 

Recently, gallium nitride semiconductor materials have been officially included in the "14th Five-Year Plan", which means that the gallium nitride industry will receive strong support from the national level in its future development, and the prospects are worth looking forward to.

 

Gallium nitride (GaN) is a third-generation semiconductor material that operates twenty times faster than traditional silicon (Si) technology and can achieve three times higher power. When used in cutting-edge fast charger products, it can achieve performance that far exceeds existing products and triples the output power with the same size.

 

Gallium nitride new technology has a wide range of applications, covering 5G communications, artificial intelligence, autonomous driving, data centers, fast charging, etc. Among them, the fast charging market has developed the fastest and has become a benchmark application for advanced technology to benefit the public. It can be said that everyone can enjoy the convenience of new technologies from the laboratory to the market; and the huge shipments and demand of fast charging have also fed back the continuous iteration of gallium nitride technology. Fast charging and gallium nitride are a perfect match.

With its excellent performance, the development of gallium nitride technology in fast charging sources has been rapid in the past two years, its popularity has been very fast, and it has been recognized by more and more brand customers and consumers. As the core device of gallium nitride fast charging, GaN power chips have always been the focus of everyone's attention.

Charging Head Network has learned through long-term tracking research that in the past two years, the number of GaN power chip suppliers in the industry has also grown rapidly from one or two at the beginning to more than ten. Today's article is to give you a detailed understanding of the main players in the field of gallium nitride power chips in the current fast charging field.

Many manufacturers enter the market of gallium nitride power devices

Facing the growing fast charging market, there are 16 gallium nitride power chip suppliers around the world, including Navitas, PI, Innosec, Infineon, STMicroelectronics, Texas Instruments, GaNsystems, Ecomicro, Juneng Chuangxin, Dongke Semiconductor, Nitrogen Silicon Technology, Gallium Future, Quxin Micro, Transphorm, Nenghua, and Core Crown Technology.

It is worth mentioning that Innosec’s third-generation semiconductor base in Suzhou held an equipment move-in ceremony in September last year. This means that Innosec's third-generation semiconductor base in Suzhou has begun to move from the factory construction stage to the mass production preparation stage, marking the official completion of the world's largest gallium nitride factory, and also indicating that China's power semiconductors have entered a new era.

 

Charging Head Network learned through sorting that the sealed gallium nitride chips currently on the market can be divided into the following four types:

Controller + driver + GaN: This approach is represented by the old power chip brand PI. Based on InSOP-24D packaging, it has launched more than ten highly integrated gallium nitride chips that include main control, gallium nitride power devices, synchronous rectification controllers, etc. PowiGaN chips have been favored by many brands and have become the leader in the field of packaged gallium nitride fast charging chips.

In addition, among local suppliers, Dongke Semiconductor took the lead in launching two main control chips DKG045Q and DKG065Q that package gallium nitride power devices, with corresponding maximum output powers of 45W and 65W respectively. Both chips have huge advantages in saving system costs and accelerating product launch, and are expected to be mass-produced in 2021.

Driver + GaN: This kind of packaged gallium nitride power chip is mainly represented by NanoVis Semiconductor. It is the first manufacturer in the industry to launch a built-in driver gallium nitride power chip. With its streamlined peripheral design, it has won the favor of engineers and power supply manufacturers. By the end of 2020, chip shipments exceeded 13 million.

Driver+2*GaN: A dual-tube half-bridge product that combines two gallium nitride power devices and a driver. Its integration level is higher than that of traditional gallium nitride power devices. Such products are used in ACF architecture and LLC architecture gallium nitride fast charging products to achieve a more streamlined peripheral design. At present, manufacturers such as NanoVis Semiconductor, Infineon, and STMicroelectronics have plans for this type of packaged gallium nitride chips.

Driver + Protection + GaN: NanoVis Semiconductor recently launched a new generation of gallium nitride power chip NV6128, which integrates GaN FET, driver and logic protection devices. By adding protection circuits to gallium nitride devices and integrating switching transistors and logic circuits, lower parasitic parameters and shorter response times can be obtained. The chip can achieve digital input and high-performance power output, and power engineers can design faster, smaller, and higher-speed power supplies based on this.

Gallium nitride chip brand inventory

The following rankings are in no particular order and are only sorted alphabetically by brand for the convenience of readers.

ARK Aikewei

 

Aiko Microelectronics focuses on the development of high-power density overall solutions and has the mission of solving the pain points and bottlenecks caused by high-power density power systems. The core team has more than 20 years of professional experience in the power semiconductor industry. Through continuous innovation and forward-looking system architecture and an in-depth combination of power devices and high-efficiency packaging, we achieve high-quality, high-efficiency and pure power systems to meet the market's future needs.

In the AC/DC fast charging solution, Aiko Micro not only launches original secondary chips, but also independently develops MOSFET power devices. With the strong demand for high power density in electronic products for various applications, we are committed to continuous investment, innovation, research and development, and working with our partners to lead the market and create the future.

Cohenius energy-concentrating core

 

Qingdao Juneng Chuangxin Microelectronics Co., Ltd. was established in July 2018. The company is located in Qingdao International Innovation Park. It is mainly engaged in the research and development, design, production and sales of third-generation semiconductor gallium nitride on silicon (GaN). It focuses on providing the industry with high-performance, low-cost GaN power device products and technical solutions.

Juneng Chuangxin masters the industry's leading GaN power device and application design technology, and is committed to integrating the industry's superior resources to create a GaN device development and application ecosystem, providing localized core component support for PD fast charging, smart home appliances, cloud computing, 5G communications, etc.

Backed by the support of listed company Sai Microelectronics (300456) and well-known investment funds, Juneng Chuangxin has established an industry-leading management and technical team. In the process of product development and mass production, we always adhere to the requirements of high quality and high reliability. While gaining widespread recognition from partners, it has gradually become an internationally renowned company in the third-generation semiconductor field.

In the field of consumer power supplies, Juneng Chuangxin provides domestic GaN material and device technology solutions for fast charging applications, and launches new 65W, 100W, and 120W gallium nitride fast charging reference designs based on existing gallium nitride power devices.

Corenergy Nenghua

 

Jiangsu Nenghua Microelectronics Technology Development Co., Ltd. was founded in 2010 by a doctor who returned from studying in the United States. The team brings together many domestic and overseas professionals and is a high-tech company specializing in the design, R&D, production, manufacturing and sales of high-performance gallium nitride epitaxy, wafers, devices and modules.

Gallium nitride (GaN) is a representative of the new generation of compound semiconductors. Jiangsu Nenghua has established a GaN power device production line. The total planned investment of the project is 5 billion yuan, which will be invested in installments. The first phase investment is expected to exceed 1 billion. The company moved into Zhangjiagang National Remanufacturing Industrial Park in 2017. The new factory covers an area of ​​30,000 square meters and has dust-free workshops of Class 10,000, Class 1,000 and Class 100, equipped with advanced production equipment and professional technical personnel.

DANXI nitrogen silicon technology

 

Chengdu Nitrous Silicon Technology Co., Ltd. is a technology company focusing on the research and development of third-generation semiconductor gallium nitride power devices and ICs. It focuses on the design, development, sales and solution provision of gallium nitride power devices and their driver chips. The two founders of the company both have more than 5 years of relevant research and development experience in the gallium nitride field.

Nitrous Silicon Technology released China's first gallium nitride ultra-high-speed driver DX1001 in March 2020. In April of the same year, it launched a variety of domestic mass-production-level 650V gallium nitride power chips DX6515/6510/6508, which were matched with the company's driver chips to enter the PD fast charging industry.

It is worth mentioning that Nitrous Silicon Technology also launched the 650V/160mΩ gallium nitride transistor with the smallest size and strongest heat dissipation capability in the industry, leading the gallium nitride industry revolution. Based on existing gallium nitride power devices, Nitrogen Silicon Technology has launched 4 sets of domestic GaN fast charging reference designs to enrich the product selection needs of fast charging source engineers.

DONGKE Dongke

 

Anhui Dongke Semiconductor Co., Ltd. was established in 2009 and is headquartered in Ma'anshan City, Anhui Province. It is mainly engaged in the research and development, production and sales of switching power supply chips, synchronous rectification chips, BUCK circuit power chips and other products. It has also established wholly-owned subsidiaries in Shenzhen and Wuxi and an Indian company to be responsible for global market sales and technical support.

Dongke Semiconductor has established R&D centers in Beijing, Qingdao, Wuxi, and Shenzhen. Many returnee doctors are responsible for R&D exploration. It has a 20,000-square-meter packaging workshop and quality laboratory in Ma'anshan, Anhui, with DIP-8/SOP-8/SM-7/SM-10/T O-220 and other product packaging capabilities; the Maanshan Integrated Circuit National Laboratory established at the headquarters of Dongke Semiconductor has various analysis capabilities such as unpacking, failure analysis, mid-term testing, dicing, and high and low temperature testing of chips, providing reliable guarantee for the company's product quality and supply.

For applications in the field of fast charging, Dongke Semiconductor launched the industry's first power chip that encapsulates gallium nitride power devices, becoming a milestone in the development history of domestic gallium nitride fast charging.

GaN systemGaN system

 

GaN Systems was founded in Ottawa, Canada's capital, in 2008. The founder was a former Nortel senior power semiconductor expert. The company focuses on the development of enhancement-mode gallium nitride power devices and provides high-performance, high-reliability enhancement-mode silicon-based GaN HEMT power devices.

GaN Systems has patented GaN chip design, GaNPx chip-scale packaging technology and the most comprehensive 650V and 100V product series on the market, covering low-power consumer electronics to industrial-level power supply applications of tens of kW or more.

GaN Systems adopts a fabless model and works with world-class foundries and supply chains. Since the product began mass production in 2014, it has served more than 2,000 customers worldwide. It has sales branches and application support in China, Japan, South Korea, North America and Europe. It is understood that GaN Systems’ gallium nitride power chips have entered Philips’ fast charging supply chain.

GaNext gallium future

 

Zhuhai Gallium Future Technology Co., Ltd. was established in October 2020. The company is committed to technological innovation and leadership in third-generation semiconductor GaN-on-Si devices. Through a high starting point and a strong team, we will realize the localization of GaN technology, promote the advancement of GaN device technology, and achieve green and efficient use of energy through innovative design of power systems.

The company's founding team consists of three senior GaN-on-Si technology/industry experts, led by Professor Yu Hongyu from the Shenzhen-Hong Kong School of Microelectronics and the R&D VP of a well-known American gallium nitride company. The former co-founder of Huawei's GaN industry joins in to build a complete iron triangle of technology, manufacturing, and market, with accumulated experience. Through mature and leading products, we will promote the localization of GaN technology, rely on the support of China's huge power application market and the country's third-generation semiconductor industry policy, march towards the peak of the gallium nitride industry, and help achieve breakthroughs in the country's third-generation semiconductor industry goals.

GaNPower volume core micro

 

Suzhou Liangxin Micro Semiconductor Co., Ltd. is a company registered in China by Canadian GaNPower International Inc. GaNPower was established in Canada in 2015 and is headquartered in Vancouver, Canada. GaNPower is a well-known company in the global gallium nitride power device industry. Its current products mainly include enhanced gallium nitride power devices covering different current levels and packaging forms and advanced gallium nitride-based power electronics application solutions.

Suzhou Liangxin Micro Semiconductor Co., Ltd. won the title of the 13th Jinji Lake Science and Technology Leading Talents of Suzhou Industrial Park in 2019; "Gallium Nitride Power Devices and Related Industrial Applications" was listed as a key government support project. The company's gallium nitride power device products won the industry's authoritative award: the Annual Power Device Award of the 2020 ASPENCORE China IC Design Achievement Award. The company currently has 40 U.S. and Chinese patents and applications.

It is reported that Liuxin Micro Semiconductor has launched a 650V gallium nitride power device, suitable for 45W-300W fast charging.

Innoscience

 

Innosec Technology Co., Ltd. was established in December 2015. It is a national high-tech enterprise dedicated to the development and production of 8-inch gallium nitride on silicon power devices and radio frequency devices. Innosec is one of the world's largest gallium nitride power device IDM companies. It has the most experienced team in the gallium nitride field, advanced 8-inch machine equipment, and systematic R&D quality control and analysis capabilities, giving Innosec the market competitive advantage of first-class quality and performance of gallium nitride products.

Since establishing the world's first 8-inch enhancement-mode GaN-on-silicon power device mass production line in 2017, Innosec has released and sold a variety of GaN power devices below 650V. The performance indicators of the products have reached the international advanced level and can be widely used in many emerging fields, such as fast charging, 5G communications, artificial intelligence, autonomous driving, data centers, etc.

At present, Innosec has built the world's largest gallium nitride factory. In the USB PD gallium nitride fast charging market, Innosec's 650V high-voltage gallium nitride power devices have been used in many well-known brand products such as Nubia, Meizu, MOMAX, and ROCK. Innosec has recently launched second-generation InnoGaN products, with performance significantly improved compared to the previous generation.

In addition, Innosec has also launched a variety of low-voltage GaN power devices suitable for synchronous rectification, DC-DC voltage conversion, laser radar and other fields. In the global market, Innosec is one of the few IDM chip manufacturers with a full range of gallium nitride high-voltage and low-voltage product lines.

infineon Infineon

 

Infineon Technologies AG is the world's leading semiconductor technology company. We make people's lives more convenient, safer and environmentally friendly. Infineon's microelectronic products and solutions will lead you to a bright future. In the 2020 fiscal year (ending September 30), the company had sales of 8.5 billion euros and approximately 46,700 employees worldwide. In April 2020, Infineon officially completed the acquisition of Cypress Semiconductor, successfully becoming one of the top ten semiconductor manufacturers in the world.

Infineon's Power & Sensing Systems Division provides a wide range of power, connectivity, radio frequency (RF) and sensing technologies that enable charging equipment, power tools, and lighting systems to become smaller and lighter while improving energy efficiency. The new generation of silicon-based/wide-bandgap semiconductor solutions (silicon carbide/gallium nitride) will bring unprecedented outstanding performance and reliability to 5G, big data and renewable energy applications.

High-precision XENSIV sensor solutions give IoT devices human sensory capabilities, allowing these devices to sense their surroundings and respond "instinctively". Audio amplifier products expand the product line of the Power and Sensing Systems Division, allowing smart speakers and other audio application devices to provide an excellent sound quality experience.

Navitas

 

Navitas Semiconductor is the world's leading gallium nitride power IC company. Founded in 2014 and headquartered in Ireland, it has a strong and growing team of experts in the power semiconductor industry. It has industry-leading experience in materials, devices, applications, systems, design and marketing. The company's founder holds more than 320 patents.

GaNFast power ICs integrate GaN power (FETs) with drive, control and protection to deliver faster charging, higher power density and greater energy savings for mobile, consumer electronics, enterprise, e-mobility and new energy markets. Navitas has issued and is applying for more than 120 patents in all aspects of GaN devices, chip design, packaging, applications and systems. It has completed production and successfully delivered more than 13 million GaNFast gallium nitride power ICs, leading the world in product quality and shipment volume.

Recently, Nanovi Semiconductor has also launched the latest generation of gallium nitride power chip NV6128, which has built-in driver and protection functions and is suitable for high-power fast charging products. With its excellent product performance, Nanovi Semiconductor has become a supplier of gallium nitride chips for many well-known brands such as Xiaomi, OPPO, Lenovo, Dell, and LG, and has developed more than a hundred products based on GaNFast chips.

PI

 

Power Integrations is a supplier of high-performance electronic components and power solutions focusing on high-voltage power management and control fields. It is headquartered in Silicon Valley, USA.

The integrated circuits and diodes introduced by PI design small, compact and energy-efficient AC-DC power supplies for many electronic products including mobile devices, home appliances, smart meters, LED lights and industrial applications. SCALE® gate drivers improve efficiency, reliability and cost-effectiveness in high-power applications including industrial motors, solar and wind energy systems, electric vehicles and high-voltage direct current transmission.

Since its introduction in 1998, Power Integrations' EcoSmart® energy-saving technology has saved billions of dollars in energy consumption and avoided millions of tons of carbon emissions. Due to the environmental impact of its products, Power Integrations' stock has been included in the Environmental Technology Stock Index sponsored by Cleantech Group LLC and Clean Edge.

The Charging Head Network dismantled and learned that PI’s gallium nitride chips have been adopted by fast charging products of many brands such as Xiaomi, OPPO, ANKER, Lulian, and Belkin. In addition, PI also launched a new MinE-CAP IC, which can be reduced in size by 40% when used in fast charging chargers.

STMicroelectronics

 

STMicroelectronics (ST) is the world's leading semiconductor company, providing smart, energy-efficient products and solutions that are closely related to daily life. STMicroelectronics' products are ubiquitous and we are committed to working with customers to enable smart driving, smart factories, smart cities and smart homes, as well as next-generation mobile and IoT products. Enjoy technology and enjoy life. STMicroelectronics advocates the concept of technology leading smart life (life.augmented). STMicroelectronics’ net revenue in 2018 was US$9.66 billion and it has more than 100,000 customers worldwide.

Currently, STMicroelectronics has launched a GaN half-bridge device with a built-in driver and two gallium nitride chips, and has launched a set of 65W gallium nitride fast charging reference design based on this chip.

Texas InstrumentsTexas Instruments

 

Texas Instruments is a leading global semiconductor company that designs, manufactures, tests and sells analog and embedded processing chips. For decades, TI has been making progress with more than 80,000 products that help approximately 100,000 customers efficiently manage power, accurately sense and transmit data, and provide core control or processing in their designs to enter markets such as industrial, automotive, personal electronics, communications equipment, and enterprise systems.

On November 10, 2020, Texas Instruments launched two gallium nitride power devices, 650V and 600V, further enriching and expanding its high-voltage power management product line. The new GaN FET family features fast-switching 2.2 MHz integrated gate drivers, helping engineers deliver twice the power density and up to 99% efficiency, and reduce the size of power magnetics by 59% compared to existing solutions.

Transphorm

 

Transphorm designs, manufactures and sells high-performance, high-reliability gallium nitride (GaN) semiconductor power devices for high-voltage power conversion applications. Transphorm holds an extremely large intellectual property portfolio, with more than 1,000 patents approved and awaiting approval around the world. It is one of the first IDM companies in the industry to produce GaN FETs certified by JEDEC and AEC-Q101.

Thanks to its vertically integrated business model, Transphorm is able to innovate at every stage of product and technology development - including design, manufacturing, device and application support. The charging head website dismantled and learned that a 65W gallium nitride charger previously launched by ROMOSS has official Transphorm GaN devices built into it.

XINGUAN Xinguan Technology

 

Dalian Xinguan Technology Co., Ltd. is the world's leading manufacturer of third-generation semiconductor gallium nitride epitaxy and devices. It is committed to the research and development, design, production and promotion of silicon-based gallium nitride epitaxy and power devices. It has advanced epitaxial materials and power device production lines and provides 650V full-scale power device products. The application of power power covers the range from tens of watts to several kilowatts. It is widely used in consumer electronics (fast charging, high-power adapters, etc.), industrial electronics and automotive electronics.

The characteristics of the core cap gallium nitride power device are that it is compatible with standard MOS drivers and has simple application design. It has a breakdown voltage of over 1500V and is safe to use.

Summary of charging head network

Since GaN technology began to be commercialized in the field of consumer power supplies three years ago, there are now hundreds of GaN fast chargers on the market, and the market is developing at a rapid pace. On the one hand, this is due to the brand influence generated by the successive entry of major mobile phone and laptop manufacturers. On the other hand, it is also inseparable from the increasing improvement of the gallium nitride fast charging ecosystem.

According to the incomplete statistics of the charging head website, there are as many as 16 gallium nitride chip suppliers that have entered the fast charging market, with hundreds of solutions; and covering a variety of packaging methods, they can fully meet the current fast charging source market’s selection needs for core devices.

It is believed that with the strong support of the gallium nitride industry in the country’s 14th Five-Year Plan, more and more manufacturers of gallium nitride power chips will enter the market. Not only will product types be further improved, but more importantly, when the gallium nitride industry develops on a large scale, the cost for power supply manufacturers to develop gallium nitride fast charging will be optimized; and gallium nitride power chips will also become the first choice for more and more high-performance fast charging source products.

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