從 2018 年開始，基於氮化鎵技術開發的多種快速充電器已投入量產，氮化鎵也正式開始在消費電源領域進行商業應用。

 

近期，氮化鎵半導體材料已被正式納入「十四五」規劃，這意味著氮化鎵產業在未來的發展中將得到國家層面的大力支持，前景值得期待。

 

氮化鎵（GaN）是一種第三代半導體材料，其運行速度是傳統矽（Si）技術的二十倍，功率輸出是矽的三倍。應用於尖端快充產品時，其性能遠超現有產品，且在相同尺寸下輸出功率可提升三倍。

 

Gallium nitride new technology has a wide range of applications, covering 5G communications, artificial intelligence, autonomous driving, data centers, fast charging, etc. Among them, the fast charging market has developed the fastest and has become a benchmark application for advanced technology to benefit the public. It can be said that everyone can enjoy the convenience of new technologies from the laboratory to the market; and the huge shipments and demand of fast charging have also fed back the continuous iteration of gallium nitride technology. Fast charging and gallium nitride are a perfect match.

憑藉其卓越的性能，氮化鎵技術在快充領域的應用在過去兩年發展迅猛，迅速普及，並獲得了越來越多品牌客戶和消費者的認可。作為氮化鎵快充的核心裝置，GaN功率晶片一直是人們關注的焦點。

充電頭網路透過長期追蹤研究發現，過去兩年，產業內氮化鎵功率晶片供應商的數量也從最初的一兩家迅速增長到十多家。今天的文章將詳細介紹目前快充領域氮化鎵功率晶片的主要廠商。

Many manufacturers enter the market of gallium nitride power devices

Facing the growing fast charging market, there are 16 gallium nitride power chip suppliers around the world, including Navitas, PI, Innosec, Infineon, STMicroelectronics, Texas Instruments, GaNsystems, Ecomicro, Juneng Chuangxin, Dongke Semiconductor, Nitrogen Silicon Technology, Gallium Future, Quxin Micro, Transphorm, Nenghua, and Core Crown Technology.

值得一提的是，英諾賽位於蘇州的第三代半導體基地於去年9月舉行了設備搬遷儀式。這標誌著英諾賽​​蘇州第三代半導體基地已從工廠建設階段邁向量產準備階段，也標誌著全球最大的氮化鎵工廠正式竣工，同時也標誌著中國功率半導體產業進入了一個新時代。

 

充電頭網路透過分類了解到，目前市面上的密封氮化鎵晶片可分為以下四種：

控制器+驅動器+GaN：此方案以老牌功率晶片品牌PI為代表。基於InSOP-24D封裝，PI已推出十餘款高度整合的氮化鎵晶片，涵蓋主控晶片、氮化鎵功率裝置、同步整流控制器等。 PowiGaN晶片深受眾多品牌青睞，成為封裝式氮化鎵快充晶片領域的領導產品。

此外，在本地供應商中，東科半導體率先推出了兩款主控晶片DKG045Q和DKG065Q，這兩款晶片均採用氮化鎵功率裝置封裝，最大輸出功率分別為45W和65W。這兩款晶片在降低系統成本和加快產品上市速度方面具有巨大優勢，預計在2021年實現量產。

驅動器+GaN：這種封裝式氮化鎵功率晶片主要以NanoVis Semiconductor為代表。它是業界首家推出內建驅動器氮化鎵功率晶片的廠商。憑藉其精簡的外圍設計，該晶片贏得了工程師和電源廠商的青睞。截至2020年底，晶片出貨量超過13萬片。

Driver+2*GaN：這是一款雙管半橋產品，整合了兩個氮化鎵功率元件和一個驅動器。其整合度高於傳統的氮化鎵功率裝置。此類產品應用於ACF架構和LLC架構的氮化鎵快速充電產品中，以實現更精簡的外圍設計。目前，NanoVis Semiconductor、英飛凌和義法半導體等廠商均有此類封裝氮化鎵晶片的計畫。

驅動+保護+氮化鎵：NanoVis Semiconductor 最近發布了新一代氮化鎵功率晶片 NV6128，該晶片整合了氮化鎵場效應電晶體 (GaN FET)、驅動元件和邏輯保護元件。透過在氮化鎵元件中添加保護電路，並整合開關電晶體和邏輯電路，可以實現更低的寄生參數和更短的響應時間。此晶片可實現數位輸入和高性能功率輸出，電源工程師可基於此設計速度更快、體積更小、速度更高的電源。

氮化鎵晶片品牌庫存

以下排名不分先後，僅為方便讀者而依品牌字母順序排列。

ARK艾克威

 

Aiko Microelectronics focuses on the development of high-power density overall solutions and has the mission of solving the pain points and bottlenecks caused by high-power density power systems. The core team has more than 20 years of professional experience in the power semiconductor industry. Through continuous innovation and forward-looking system architecture and an in-depth combination of power devices and high-efficiency packaging, we achieve high-quality, high-efficiency and pure power systems to meet the market's future needs.

In the AC/DC fast charging solution, Aiko Micro not only launches original secondary chips, but also independently develops MOSFET power devices. With the strong demand for high power density in electronic products for various applications, we are committed to continuous investment, innovation, research and development, and working with our partners to lead the market and create the future.

科尼烏斯能量集中核心

 

Qingdao Juneng Chuangxin Microelectronics Co., Ltd. was established in July 2018. The company is located in Qingdao International Innovation Park. It is mainly engaged in the research and development, design, production and sales of third-generation semiconductor gallium nitride on silicon (GaN). It focuses on providing the industry with high-performance, low-cost GaN power device products and technical solutions.

駿能創鑫掌握業界領先的GaN功率元件及應用設計技術，致力於整合業界優勢資源，打造GaN元件開發及應用生態系統，為PD快充、智慧家電、雲端運算、5G通訊等提供在地化核心元件支援。

Backed by the support of listed company Sai Microelectronics (300456) and well-known investment funds, Juneng Chuangxin has established an industry-leading management and technical team. In the process of product development and mass production, we always adhere to the requirements of high quality and high reliability. While gaining widespread recognition from partners, it has gradually become an internationally renowned company in the third-generation semiconductor field.

在消費電源領域，駿能創鑫為快速充電應用提供國內氮化鎵材料和裝置技術解決方案，並基於現有的氮化鎵功率元件推出了新的 65W、100W 和 120W 氮化鎵快速充電參考設計。

康能

 

江蘇能華微電子技術發展有限公司由一位赴美留學的醫師於2010年創立。公司匯聚了許多國內外專業人才，是一家專注於高性能氮化鎵外延、晶圓、裝置及模組的設計、研發、生產、製造和銷售的高新技術企業。

氮化鎵（GaN）是新一代化合物半導體的代表。江蘇能華已建成一條GaN功率元件生產線。該項目總投資計畫為50億元人民幣，將分期投資，第一期投資預計超過10億元。本公司於2017年遷入張家港國家再製造產業園區。新廠佔地3萬平方米，擁有萬級、千級和百級無塵車間，配備先進的生產設備和專業的技術人員。

DANXI nitrogen silicon technology

 

成都氮矽科技有限公司是一家專注於第三代氮化鎵功率元件及積體電路研發的科技公司。本公司致力於氮化​​鎵功率元件及其驅動晶片的設計、開發、銷售和解決方案提供。本公司兩位創辦人均在氮化鎵領域擁有超過5年的相關研發經驗。

2020年3月，氮化矽科技發表了中國首款氮化鎵超高速驅動器DX1001。同年4月，該公司推出了多款國產量產級650V氮化鎵功率晶片DX6515/6510/6508，並與公司的驅動晶片配套使用，進軍PD快充產業。

It is worth mentioning that Nitrous Silicon Technology also launched the 650V/160mΩ gallium nitride transistor with the smallest size and strongest heat dissipation capability in the industry, leading the gallium nitride industry revolution. Based on existing gallium nitride power devices, Nitrogen Silicon Technology has launched 4 sets of domestic GaN fast charging reference designs to enrich the product selection needs of fast charging source engineers.

DONGKE Dongke

 

Anhui Dongke Semiconductor Co., Ltd. was established in 2009 and is headquartered in Ma'anshan City, Anhui Province. It is mainly engaged in the research and development, production and sales of switching power supply chips, synchronous rectification chips, BUCK circuit power chips and other products. It has also established wholly-owned subsidiaries in Shenzhen and Wuxi and an Indian company to be responsible for global market sales and technical support.

東科半導體在北京、青島、無錫和深圳設立了研發中心，許多海歸醫師負責研發探索工作。公司在安徽馬鞍山擁有20,000萬平方米的封裝車間和品質實驗室，具備DIP-8/SOP-8/SM-7/SM-10/TO-220等多種產品封裝能力；位於東科半導體總部的馬鞍山集成電路國家實驗室擁有拆包、失效分析、中期測試、切割、高低溫芯片測試公司質量和供貨

針對快速充電領域的應用，東科半導體推出了業界首款封裝氮化鎵功率裝置的功率晶片，成為國內氮化鎵快速充電發展史上的里程碑。

GaN systemGaN system

 

GaN Systems公司於2008年在加拿大首都渥太華成立。創辦人曾是北電網路的高級功率半導體專家。該公司專注於增強型氮化鎵功率裝置的開發，並提供高性能、高可靠性的增強型矽基GaN HEMT功率裝置。

GaN Systems 擁有 GaN 晶片設計專利、GaNPx 晶片級封裝技術以及市場上最全面的 650V 和 100V 產品系列，涵蓋低功耗消費性電子產品到數十千瓦或以上的工業級電源應用。

GaN Systems採用無晶圓廠模式，與世界一流的代工廠和供應鏈合作。自2014年產品量產以來，已服務全球2,000多家客戶。本公司在中國、日本、韓國、北美和歐洲設有銷售分公司和應用支援中心。據悉，GaN Systems的氮化鎵功率晶片已進入飛利浦的快充供應鏈。

GaNext鎵的未來

 

珠海鎵未來科技有限公司成立於2020年10月，致力於第三代半導體GaN-on-Si元件的技術創新與領先地位。憑藉高起點和強大的團隊，我們將實現GaN技術的國產化，推動GaN元件技術的進步，並透過創新的電源系統設計實現綠色高效的能源利用。

公司創始團隊由三位資深的GaN-on-Si技術/產業專家組成，領銜的是深圳香港微電子學院的於宏宇教授和一家知名美國氮化鎵公司的研發副總裁。華為GaN產業鏈的前聯合創始人也加入其中，憑藉豐富的經驗，構建了技術、製造和市場三方的完整「鐵三角」。我們將透過成熟領先的產品，推動GaN技術的國產化，依託中國龐大的功率應用市場和國家第三代半導體產業政策的支持，邁向氮化鎵產業的巔峰，助力國家實現第三代半導體產業目標的突破。

GaN功率體積核心微

 

Suzhou Liangxin Micro Semiconductor Co., Ltd. is a company registered in China by Canadian GaNPower International Inc. GaNPower was established in Canada in 2015 and is headquartered in Vancouver, Canada. GaNPower is a well-known company in the global gallium nitride power device industry. Its current products mainly include enhanced gallium nitride power devices covering different current levels and packaging forms and advanced gallium nitride-based power electronics application solutions.

蘇州良鑫微半導體有限公司榮獲2019年蘇州金雞湖產業園區第十三屆科技領軍人才稱號；「氮化鎵功率裝置及相關工業應用」被列為政府重點支援計畫。本公司氮化鎵功率裝置產品榮獲業界權威獎項：2020年ASPENCORE中國IC設計成就獎年度功率元件獎。公司目前擁有40項中美專利及專利申請。

It is reported that Liuxin Micro Semiconductor has launched a 650V gallium nitride power device, suitable for 45W-300W fast charging.

無知

 

深圳市英諾賽克科技有限公司成立於2015年12月，是一家致力於研發和生產8吋矽基氮化鎵功率元件和射頻元件的全國性新技術企業。英諾賽克是全球最大的氮化鎵功率元件IDM公司之一，擁有氮化鎵領域經驗最豐富的團隊、先進的8吋加工設備以及系統化的研發品質控制和分析能力，使其在氮化鎵產品領域擁有卓越的品質和性能，從而具備強大的市場競爭力。

Since establishing the world's first 8-inch enhancement-mode GaN-on-silicon power device mass production line in 2017, Innosec has released and sold a variety of GaN power devices below 650V. The performance indicators of the products have reached the international advanced level and can be widely used in many emerging fields, such as fast charging, 5G communications, artificial intelligence, autonomous driving, data centers, etc.

目前，Innosec已建成全球最大的氮化鎵工廠。在USB PD氮化鎵快充市場，Innosec的650V高壓氮化鎵功率裝置已被努比亞、魅族、MOMAX、ROCK等眾多知名品牌產品所採用。 Innosec近期推出了第二代InnoGaN產品，性能較上一代產品有了顯著提升。

此外，Innosec也推出了一系列適用於同步整流、DC-DC電壓轉換、雷射雷達等領域的低壓GaN功率元件。在全球市場上，Innosec是少數幾家擁有全系列氮化鎵高壓和低壓產品線的IDM晶片製造商之一。

英飛凌

 

英飛凌科技股份公司是全球領先的半導體技術公司。我們致力於讓人們的生活更便利、更安全、更環保。英飛凌的微電子產品和解決方案將引領您邁向光明未來。 2020財年（截至9月30日），公司銷售額達8.5億歐元，全球員工約46,700人。 2020年4月，英飛凌正式完成對賽普拉斯半導體的收購，成功躋身全球十大半導體製造商。

Infineon's Power & Sensing Systems Division provides a wide range of power, connectivity, radio frequency (RF) and sensing technologies that enable charging equipment, power tools, and lighting systems to become smaller and lighter while improving energy efficiency. The new generation of silicon-based/wide-bandgap semiconductor solutions (silicon carbide/gallium nitride) will bring unprecedented outstanding performance and reliability to 5G, big data and renewable energy applications.

High-precision XENSIV sensor solutions give IoT devices human sensory capabilities, allowing these devices to sense their surroundings and respond "instinctively". Audio amplifier products expand the product line of the Power and Sensing Systems Division, allowing smart speakers and other audio application devices to provide an excellent sound quality experience.

納維塔斯

 

Navitas Semiconductor is the world's leading gallium nitride power IC company. Founded in 2014 and headquartered in Ireland, it has a strong and growing team of experts in the power semiconductor industry. It has industry-leading experience in materials, devices, applications, systems, design and marketing. The company's founder holds more than 320 patents.

GaNFast power ICs integrate GaN power (FETs) with drive, control and protection to deliver faster charging, higher power density and greater energy savings for mobile, consumer electronics, enterprise, e-mobility and new energy markets. Navitas has issued and is applying for more than 120 patents in all aspects of GaN devices, chip design, packaging, applications and systems. It has completed production and successfully delivered more than 13 million GaNFast gallium nitride power ICs, leading the world in product quality and shipment volume.

近日，奈米維半導體推出了最新一代氮化鎵功率晶片NV6128，該晶片內建驅動和保護功能，適用於高功率快充產品。憑藉卓越的產品性能，奈米維半導體已成為小米、OPPO、聯想、戴爾、LG等眾多知名品牌的氮化鎵晶片供應商，並已開發出百餘款基於GaNFast晶片的產品。

PI

 

Power Integrations是一家高效能電子元件和電源解決方案供應商，專注於高壓電源管理和控制領域。公司總部位於美國矽谷。

PI公司推出的積體電路和二極體設計，可為包括行動裝置、家用電器、智慧電錶、LED燈和工業應用在內的眾多電子產品打造小型、緊湊且節能的AC-DC電源。 SCALE®閘極驅動器可提高工業馬達、太陽能和風能係統、電動車和高壓直流輸電等高功率應用的效率、可靠性和成本效益。

自1998年推出以來，Power Integrations公司的EcoSmart®節能技術已節省數十億美元的能源消耗，並避免了數百萬噸的碳排放。鑑於其產品對環境的正面影響，Power Integrations公司的股票已被納入由Cleantech Group LLC和Clean Edge共同發起的「環境技術股票指數」。

充電頭網路拆解後發現，PI的氮化鎵晶片已被小米、OPPO、安克、魯聯、貝爾金等眾多品牌的快充產品採用。此外，PI還推出了一款新型MinE-CAP IC，用於快充充電器時，尺寸可縮小40%。

意法半導體

 

STMicroelectronics (ST) is the world's leading semiconductor company, providing smart, energy-efficient products and solutions that are closely related to daily life. STMicroelectronics' products are ubiquitous and we are committed to working with customers to enable smart driving, smart factories, smart cities and smart homes, as well as next-generation mobile and IoT products. Enjoy technology and enjoy life. STMicroelectronics advocates the concept of technology leading smart life (life.augmented). STMicroelectronics’ net revenue in 2018 was US$9.66 billion and it has more than 100,000 customers worldwide.

目前，義法半導體已推出一款內建驅動器和兩顆氮化鎵晶片的GaN半橋元件，並基於該晶片推出了一套65W氮化鎵快速充電參考設計。

Texas InstrumentsTexas Instruments

 

德州儀器（TI）是一家全球領先的半導體公司，致力於模擬和嵌入式處理晶片的設計、製造、測試和銷售。數十年來，TI憑藉著超過80,000萬種產品不斷取得進步，幫助約100,000萬家客戶高效管理電源、精確感知和傳輸數據，並在其設計中提供核心控製或處理功能，從而成功進軍工業、汽車、個人電子、通訊設備和企業系統等市場。

On November 10, 2020, Texas Instruments launched two gallium nitride power devices, 650V and 600V, further enriching and expanding its high-voltage power management product line. The new GaN FET family features fast-switching 2.2 MHz integrated gate drivers, helping engineers deliver twice the power density and up to 99% efficiency, and reduce the size of power magnetics by 59% compared to existing solutions.

透明質

 

Transphorm公司設計、製造和銷售高性能、高可靠性的氮化鎵（GaN）半導體功率裝置，廣泛應用於高壓電源轉換領域。 Transphorm擁有極為龐大的智慧財產權組合，在全球已獲批准和正在申請的專利超過1,000項。它是業內首批生產通過JEDEC和AEC-Q101認證的GaN FET的整合裝置製造商（IDM）之一。

Thanks to its vertically integrated business model, Transphorm is able to innovate at every stage of product and technology development - including design, manufacturing, device and application support. The charging head website dismantled and learned that a 65W gallium nitride charger previously launched by ROMOSS has official Transphorm GaN devices built into it.

XINGUAN Xinguan Technology

 

大連新冠科技有限公司是全球領先的第三代半導體氮化鎵外延及裝置製造商。本公司致力於矽基氮化鎵外延及功率元件的研發、設計、生產與推廣。本公司擁有先進的外延材料和功率元件生產線，可提供650V全系列功率元件產品。電力應用範圍涵蓋數十瓦至數千瓦，廣泛應用於消費性電子（快充、高功率適配器等）、工業電子和汽車電子等領域。

The characteristics of the core cap gallium nitride power device are that it is compatible with standard MOS drivers and has simple application design. It has a breakdown voltage of over 1500V and is safe to use.

充電頭網總結

自從三年前氮化鎵（GaN）技術開始在消費電源領域商業化以來，市面上已經出現了數百款GaN快充產品，市場發展迅速。一方面，這得益於各大手機和筆記型電腦廠商的相繼入局所帶來的品牌影響力；另一方面，也離不開氮化鎵快充生態系統的不斷完善。

According to the incomplete statistics of the charging head website, there are as many as 16 gallium nitride chip suppliers that have entered the fast charging market, with hundreds of solutions; and covering a variety of packaging methods, they can fully meet the current fast charging source market’s selection needs for core devices.

It is believed that with the strong support of the gallium nitride industry in the country’s 14th Five-Year Plan, more and more manufacturers of gallium nitride power chips will enter the market. Not only will product types be further improved, but more importantly, when the gallium nitride industry develops on a large scale, the cost for power supply manufacturers to develop gallium nitride fast charging will be optimized; and gallium nitride power chips will also become the first choice for more and more high-performance fast charging source products.

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