Cree, Qorvo, NXP, MicrochipMany other companies have intensively launched 5G gallium nitride products;Sumitomo Electric、NXPIt is also building a 5G gallium nitride factory in the United States.

GaN will be in 5G deploymentReplace LDMOS technology, it is expected that the demand for GaN RF devices in the 5G market will reach6.27 billion yuan.At present, some companies have begun to obtain large orders.for exampleErlu has obtained a long-term supply agreement of 646 million yuan.。

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Sumitomo and NXP build factories

Many companies are promoting 5G gallium nitride

I don’t know whether to followMobile World Congress (mwc)Recently, 5G gallium nitride has appeared frequently.

According to a report by Nikkei on July 4,Sumitomo ElectricBillions of yen will be invested (1 billion yen is equivalent to 58 million yuan) and will be established in the New Jersey factory in the United States starting in September.5G chip production line。

Also setting up factories in the United States is NXP. On September 30, 2020, NXP announced that it had opened a factory in Arizona, USA, that will use6-inch gallium nitride wafer to produce 5G chips, the factory will reach full production by the end of 2020.

also,Thor is also involved. On May 19, Raytheon announced that it would cooperate with foundry GlobalFoundries to develop new silicon-based gallium nitride to bring "game-changing" radio frequency performance to 5G and 6G facilities.

There are also many companies that have launched 5G gallium nitride products one after another.

At present, some companies have benefited. In December 2019, II-VI announced that it had signed a deal totaling more thanUS$100 million (approximately RMB 646 million)A multi-year agreement to provide silicon carbide substrates for gallium nitride RF power amplifiers in 5G wireless base stations.

Qorvo's latest financial report shows that Qorvo's fourth quarter of fiscal year 2021 (as of April 3, 2021)Revenue was US$1.073 billion (approximately RMB 6.9 billion), and 5G RF products are an important driving force.

Yole predicts that the GaN RF market size will reach 2026US$2.4 billion (approximately RMB 15.36 billion), among which, 5G Telecom GaN RF revenue will account for 41% in 2026.About 6.27 billion yuan.

Why does 5G need GaN?

Industry experts believe that although LDMOS technology still holds the largest market share in radio frequency base stations, GaN is expected to continue to replace it in 5G massive MIMO. It is understood that in 2014,Chinese telecom operators began to adopt GaN radio frequency solutions during the deployment of 4G LTE.

Generally speaking,Using GaN for 5G communications has the following benefits:

?GaN has higher power density and can transmit signals with greater power, thereby expanding the coverage of base stations.

? Higher power density also helps reduce the overall solution size, requiring less PCB space.

? GaN power amplifiers can operate at up to 250 degrees Fahrenheit, simplifying system heat sink and cooling requirements, further reducing size and cost.

? GaN also helps reduce the cost of operating base stations. In the Doherty PA configuration, GaN has an average efficiency of up to 60% and an output power of 100W, significantly reducing operating power consumption.

According to Cree, the solution they collaborated with MaxLinear can provide the massive MIMO radio frequency required for 5G applications.Save hundreds of watts of power consumption. At an instantaneous bandwidth of 280MHz and an average output power of 39.5dBm, the amplifier efficiency is approximately 50%.

At 2.6 GHz, NXP’s GaN multi-chip modules combine productsEfficiency increased to 52%, 8% higher than the company’s previous generation module.

Qorvo’s family of GaN amplifiers offers customers high power-added efficiency (PAE), in most casesMore than 30%, and covers the main sub-7 GHz 3GPP frequency bands.

Microchip’s GaN-on-SiC solution providesup to 10Wsaturated RF output power.

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