Recently, Alpha and Omega Semiconductor Limited (AOS, Nasdaq: AOSL), a well-known supplier of power semiconductors, chips and digital power products that integrates design, R&D, production and global sales, launched a new 1200V silicon carbide MOS tube (αSiC MOSFET) in an optimized TO-247-4L package that complies with AEC-Q101 standards -AOM033V120X2Q. This 1200V silicon carbide MOS transistor is packaged in a TO-247-4L automotive specification that accepts a 15V standard gate driver and provides the lowest on-resistance in the industry, meeting the high efficiency and reliability requirements of electric vehicle (EV) on-board chargers, motor drive inverters and on-board charging piles.

As the electric vehicle market accelerates by millions of units annually, automakers are increasingly implementing 800V electrical systems to reduce system size and weight while extending EV range and significantly increasing charging speeds. AOS 1200V automotive-grade αSiC MOSFETs are designed for these demanding application requirements and offer superior switching performance and efficiency compared to traditional silicon devices.

AOM033V120X2QIt is a 1200V/33mΩ SiC MOS tube, which is based on our second-generation αSiC MOSFET platform and uses TO-247-4L optimized packaging. Different from the standard 3-pin package, the use of additional Kelvin Source sensing pins can reduce the parasitic inductance on the internal loop of the package, allowing the device to operate at higher switching frequencies. Switching losses are reduced by up to 75% compared to standard packages. Its gate drive voltage is only 15V, which allows the gate driver to have the widest compatibility, making it easy to adopt in various system designs. In addition, the increase in on-resistance of αSiC MOSFET at high temperature of 175°C is very small, which greatly reduces power loss and further improves efficiency.

"In order to continue to promote electric vehicle technology to replace traditional internal combustion engine-based transportation, automakers are working hard to extend driving range and shorten charging time. With the release of our 1200V αSiC MOSFET that meets vehicle regulatory verification standards, AOS can provide designers with more advanced next-generation semiconductor technology to improve efficiency and achieve energy efficiency goals." "Our customers choose our technology due to the combination of product performance, reliability and a supply chain with volume production capabilities," said David Sheridan, senior director of wide bandgap products at AOS.

The αSiC MOSFET product portfolio will be expanded in the second half of this year to include a wider range of static on-resistance and more packaging options, as well as more products that have passed the AEC-Q101 automotive regulatory verification standard, please stay tuned.

Technical Highlights

• Passed the AEC-Q101 vehicle regulation verification standard qualification, and provided the quality assurance program PPAP report used in the automotive industry supply chain;

• Maximum operating junction temperature 175°C;

• Low on-resistance and not easily affected by temperature;

• Low Qrr and high reliability parasitic diode;

• Use additional Kelvin Source sensing pins for fast, low-loss switching;

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