1. Core Product Parameters

1.1 Absolute Maximum Ratings at Case Temperature of 25 Degrees Celsius

1. Drain-source breakdown voltage is 650 volts.
2. Continuous drain current reaches 10 amperes at 25 degrees Celsius case temperature, and 6.3 amperes at 100 degrees Celsius case temperature.
3. Maximum pulsed drain current is 40 amperes.
4. The maximum allowable gate-source voltage is plus and minus 30 volts.
5. Single-pulse avalanche energy is 427 millijoules, and repetitive avalanche energy is 43 millijoules.
6. Maximum total power dissipation is 41.8 watts. Above 25 degrees Celsius case temperature, power dissipation shall be derated by 0.33 watts for each one-degree-Celsius temperature rise.
7. Operating junction temperature ranges from minus 55 degrees Celsius to 150 degrees Celsius. Storage temperature ranges from minus 55 degrees Celsius to 150 degrees Celsius. The maximum allowable pin soldering temperature is 300 degrees Celsius.

1.2 Key Electrical Characteristics at Junction Temperature of 25 Degrees Celsius

1. Gate threshold voltage ranges from 2.5 volts to 4.5 volts.
2. Maximum drain-source on-state resistance is 0.94 ohms.
3. Typical total gate charge is 35 nanocoulombs.
4. Typical reverse-transfer capacitance is 22 picofarads.
5. Maximum forward voltage of the built-in body diode is 1.5 volts.
6. Typical reverse-recovery time of the body diode is 511 nanoseconds.
7. For thermal resistance parameters, the maximum junction-to-case thermal resistance is 2.99 degrees Celsius per watt, and the maximum junction-to-ambient thermal resistance is 47.21 degrees Celsius per watt.

1.3 Package and Ordering Information

1. The device adopts TO-220F package. Pin 1 refers to gate, pin 2 refers to drain, and pin 3 refers to source.
2. Device marking printed on component body is SL10N65F.
3. It is supplied in tube packaging. Typical device weight is 2.2 grams. This model is not halogen-free.

2. Core Product Features

1. Low total gate charge reduces power loss in drive circuits and facilitates the design of high-frequency drive circuits.
2. Low reverse-transfer capacitance mitigates switching interference caused by the Miller effect.
3. Fast switching response suits various high-frequency operating conditions.
4. All devices undergo avalanche testing and offer reliable capability for unclamped inductive switching conditions.
5. Excellent immunity to abrupt voltage transients lowers the risk of false turn-on triggered by voltage transients.
6. The product complies with RoHS environmental standards.
   

3. Main Application Fields

1. High-efficiency switch-mode power supplies
2. Electronic lamp ballasts based on half-bridge topology
3. LED power supplies
4. Other high-frequency power-electronic circuits requiring high-voltage N-channel MOSFETs

4. Suggestions for Engineering Design

1. Thermal Management: This device has high junction-to-ambient thermal resistance. A heat sink must be fitted under high-power operating conditions. Natural cooling by bare component alone is not acceptable. The allowable continuous current decreases as case temperature rises. Current derating shall be performed according to the actual case temperature during equipment operation.
2. Gate Drive Circuit: The gate threshold voltage falls between 2.5 volts and 4.5 volts. A 10-volt drive voltage is recommended to achieve nominal on-state resistance. Appropriate gate resistance shall be arranged in the drive loop to suppress voltage spikes, prevent false turn-on and balance switching loss. Gate-source voltage must not exceed plus and minus 30 volts, so as to avoid breakdown damage to the gate oxide layer.
3. Inductive Load and Avalanche Conditions: Though the device can sustain avalanche stress, actual single-pulse and repetitive avalanche energy shall not exceed rated values specified in datasheet. For circuits with inductive loads, impact stress brought by unclamped inductive switching shall be fully evaluated.
4. Application Notes for Body Diode: A source-drain body diode is integrated inside the device, yet its reverse-recovery time is relatively long. If the circuit is sensitive to freewheeling recovery loss, an additional external fast-recovery diode is recommended.
5. Voltage and Current Margin Design: Practical operating voltage and current should stay below absolute maximum ratings of the device with sufficient safety margin reserved. On-state resistance rises with increasing junction temperature, which brings higher conduction loss under high-temperature conditions. This factor shall be considered in design phase.
6. Soldering Process Control: Pin soldering temperature shall not exceed 300 degrees Celsius. Soldering duration needs proper control to prevent internal chip damage caused by excessive heat.
   

5. Product Summary

SL10N65F is an N-channel power MOSFET with 650-volt breakdown voltage and 10-ampere rated current, housed in TO-220F package. It balances voltage rating, current-carrying capability and high-frequency switching performance, and has passed full avalanche reliability verification. It is suitable for medium-and-low-power high-voltage switch-mode power supplies, LED power supplies, electronic rectifiers and other equipment. In engineering practice, attention shall be paid to thermal derating, gate-drive parameter configuration and avalanche stress assessment for inductive loads. The reverse-recovery characteristic of the internal body diode also needs consideration. Adequate electrical safety margin shall be reserved to ensure long-term and stable system operation.

About Slkor：

Slkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Most of the wafer manufacturing and packaging and testing are carried out within China. The company employs and collaborates with individuals and organizations worldwide, with a laboratory for product performance and reliability testing and a central warehouse located at its headquarters in Shenzhen. Slkor has filed for over a hundred invention patents, offers more than 2,000 product models, and serves over ten thousand customers globally. Its products are exported to countries and regions including Europe, the Americas, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years. With well-established management systems and streamlined workflows, Slkor has rapidly enhanced the brand awareness and reputation of its "SLKOR" brand through its outstanding quality and standardized services. Its product range includes three major series: diodes, transistors, and power devices, with recent introductions of new products such as Hall elements and analog devices, expanding its presence in sensors, Risc-v microcontrollers, and other product categories.